Evolution of InAs Quantum Dots during Annealing Process

• Authors: Jia Guo-zhi , Yao Jiang-hong , Shu Yong-chun , Xin Xiao-dong , Pi-Biao
• Languages of publication: EN

Abstracts

EN

InAs quantum dots were grown by molecular beam epitaxy in the Stranski-Krastanow growth mode and annealed under N_2 atmospheres at different temperatures. The evolution of quantum dots with the annealing temperature increasing were slightly different with the results reported in the literature. Atomic force microscopy investigations of quantum dots uncapped layer show a size initial increase followed by a prompt decrease as annealing temperature increases. It was found that the photoluminescence signal on quantum dots capped with GaAs layer was first slightly red-shifted and then blue-shifted with an increase in annealing temperature. The blue-shift can be attributed to In/Ga interdiffusion in annealing process. Red-shift of optical features indicates the change of the quantum dots compostion, size, and strain from the barrier.

Keywords

EN

81.16.Dn; 81.05.Ea; 73.21.La

Discipline

• 73.21.La: Quantum dots
• 81.16.Dn: Self-assembly
• 81.05.Ea: III-V semiconductors

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 4
• Pages: 919-923

Dates

published

2008-10

received

2008-05-05

(unknown)

2008-07-04

Contributors

author

Jia Guo-zhi

• Tianjin Institute of Urban Construction, Tianjin 300384, China

author

Yao Jiang-hong

• The Key Lab of Advanced Technique and Fabrication, for Weak-Light Nonlinear Photonics Materials, Ministry of Education, TEDA Applied Physics School, Nankai University, Tianjin 30047, China

author

Shu Yong-chun

• The Key Lab of Advanced Technique and Fabrication, for Weak-Light Nonlinear Photonics Materials, Ministry of Education, TEDA Applied Physics School, Nankai University, Tianjin 30047, China

author

Xin Xiao-dong

• The Key Lab of Advanced Technique and Fabrication, for Weak-Light Nonlinear Photonics Materials, Ministry of Education, TEDA Applied Physics School, Nankai University, Tianjin 30047, China

author

Pi-Biao

• The Key Lab of Advanced Technique and Fabrication, for Weak-Light Nonlinear Photonics Materials, Ministry of Education, TEDA Applied Physics School, Nankai University, Tianjin 30047, China

References

• 1. H.K. Yong, S.P. Jin, H.L. Uk, C.H. Song, Appl. Phys. Lett. 82, 1099 (2003)
• 2. O.B. Shchekin, G. Park, D.L. Huffaker, D.G. Deppe, Appl. Phys. Lett. 77, 466 (2000)
• 3. I. Mukhametzhanov, Z. Wei, R. Heitz, A. Madhukar, Appl. Phys. Lett. 75, 85 (1999)
• 4. X.C. Wang, S.J. Xu, S.J. Chua, Z.H. Zhang, J. Appl. Phys. 86, 2687 (1999)
• 5. H.S. Lee, J.Y. Lee, T.W. Kim, M.D. Kim, J. Appl. Phys. 94, 6354 (2003)
• 6. Jin Soo Kim, Jin Hong Lee, Sung Ui Hong, Won Seok Han, Ho-Sang Kwack, Jong Hee Kim, Dae Kon Oh, J. Appl. Phys. 94, 2486 (2003)
• 7. E.C. Le Ru, J. Fack, R. Murray, Phys. Rev. B 67, 245318 (2003)
• 8. A.O. Kosogov, P. Werner, U. Gösele, N.N. Ledentsov, D. Bimberg, V.M. Ustinov, A.Yu. Egorov, A.E. Zhukov, P.S. Kop'ev, N.A. Bert, Zh.I. Alferov, Appl. Phys. Lett. 69, 3072 (1996)
• 9. C.T. Foxon, B.A. Joyce, J. Cryst. Growth. 44, 75 (1978)
• 10. D. Leonard, M. Krishnamurthy, S. Fafard, J.L. Merz, P.M. Petroff, J. Vac. Sci. Technol. B 12, 1063 (1994)
• 11. Y. Chen, J. Washburn, Phys. Rev. Lett. 77, 4046 (1996)
• 12. Jin Soo Kim, Jin Hong Lee, Sung Ui Hong, Won Seok Han, Ho-Sang Kwack, Jong Hee Kim, Dae Kon Oh, J. Appl. Phys. 94, 2486 (2003)

Identifiers

DOI

10.12693/APhysPolA.114.919