Hall Mobility Field Effect in Two Layer Conductivity Samples

• Authors: A. Mekys , J. Storasta , A. Zindulis , A. Smilga , S. Balakauskas
• Languages of publication: EN

Abstracts

EN

Classical Hall mobility experimental setup was applied for samples with parallel plane (sandwich) variable conductivity layers. The measured effective Hall mobility strongly depends on applied electric field and does not characterise the real carrier mobility. Numerical modelling explains the effect as a consequence of electric field redistribution and lowering at Hall contacts. Measurement of carrier mobility in such structures is suggested.

Keywords

EN

84.37.+q

Discipline

• 84.37.+q: Measurements in electric variables (including voltage, current, resistance, capacitance, inductance, impedance, and admittance, etc.)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 4
• Pages: 903-912

Dates

published

2008-10

received

2007-11-27

(unknown)

2008-03-28

(unknown)

2008-07-23

Contributors

author

A. Mekys

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

J. Storasta

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

A. Zindulis

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

A. Smilga

• Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania

author

S. Balakauskas

• Institute of Semiconductors, A. Gošstauto 11, LT-01108 Vilnius, Lithuania

References

• 1. A.J. Janavicius, J. Storasta, R. Purlys, A. Mekys, S. Balakauskas, Z. Norgela, Acta Phys. Pol. A 112, 55 (2007)
• 2. C. Herring, J. Appl. Phys. 31, 1939 (1960)
• 3. L.I. Shpinar, J.J. Jaskovec, Solid State Phys. 26, 1725 (1984)
• 4. R.H. Bube, Appl. Phys. Lett. 13, 136 (1968)
• 5. V.G. Karpov, A.Ya. Shik, B.I. Shklovsky, Sov. Phys. Semicond. 16, 1406 (1982)
• 6. A. Medeišis, J. Viščakas, Lithuanian J. Phys. XV, 260 (1975)
• 7. J. Viščakas, K. Lipskis, A. Sakalas, Lithuanian J. Phys. XI, 799 (1971)
• 8. G.E. Stillman, S.S. Bose, M.H. Kim, B. Lee, T.S. Low, in: Handbook on Semiconductors. Characterization and Properties of Semiconductors, Eds. T.S. Moss, S. Mahajan, Elsevier, Amsterdam 1994, p. 874
• 9. A. Vandooren, S. Cristoloveanu, J.P. Colinge, in: 2000 IEEE Int. SOI Conf., Wakefield, DOI: 10.1109/SOI.2000.892798, p. 118
• 10. R.L. Petritz, Phys. Rev. 110, 1254 (1958)
• 11. R.D. Larrabee, W.R. Thurber, IEEE Trans. Electron Dev. ED-27, 32 (1980)
• 12. Z. Bougrioua, M. Azize, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarašiūnas, J. Cryst. Growth 300, 228 (2007)
• 13. J.H.M. ten Thije Boonkkamp, W.H.A. Shilders, in: Numerical Device Simulation, Japan Study Tour 1993, DOI: 10.1108/eb010116
• 14. V.V. Gorbachev, L.G. Spicina, Physics of Semiconductors and Metals, Metalurgia Moskva 1976, p. 369 (in Russian)
• 15. A. Dargys, J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP, Science and Encyclopedia Publishers, Vilnius 1994, p. 263
• 16. H. Sitter, T. Nguyen Manh, Cryst. Res. Technol. 34, 605 (1999)

Identifiers

DOI

10.12693/APhysPolA.114.903