PL EN


Preferences help
enabled [disable] Abstract
Number of results
2008 | 114 | 4 | 903-912
Article title

Hall Mobility Field Effect in Two Layer Conductivity Samples

Content
Title variants
Languages of publication
EN
Abstracts
EN
Classical Hall mobility experimental setup was applied for samples with parallel plane (sandwich) variable conductivity layers. The measured effective Hall mobility strongly depends on applied electric field and does not characterise the real carrier mobility. Numerical modelling explains the effect as a consequence of electric field redistribution and lowering at Hall contacts. Measurement of carrier mobility in such structures is suggested.
Keywords
EN
Publisher

Year
Volume
114
Issue
4
Pages
903-912
Physical description
Dates
published
2008-10
received
2007-11-27
(unknown)
2008-03-28
(unknown)
2008-07-23
Contributors
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania
author
  • Institute of Materials Science and Applied Research, Vilnius University, Saulėtekio 9-III, 10222 Vilnius, Lithuania
  • Institute of Semiconductors, A. Gošstauto 11, LT-01108 Vilnius, Lithuania
References
  • 1. A.J. Janavicius, J. Storasta, R. Purlys, A. Mekys, S. Balakauskas, Z. Norgela, Acta Phys. Pol. A 112, 55 (2007)
  • 2. C. Herring, J. Appl. Phys. 31, 1939 (1960)
  • 3. L.I. Shpinar, J.J. Jaskovec, Solid State Phys. 26, 1725 (1984)
  • 4. R.H. Bube, Appl. Phys. Lett. 13, 136 (1968)
  • 5. V.G. Karpov, A.Ya. Shik, B.I. Shklovsky, Sov. Phys. Semicond. 16, 1406 (1982)
  • 6. A. Medeišis, J. Viščakas, Lithuanian J. Phys. XV, 260 (1975)
  • 7. J. Viščakas, K. Lipskis, A. Sakalas, Lithuanian J. Phys. XI, 799 (1971)
  • 8. G.E. Stillman, S.S. Bose, M.H. Kim, B. Lee, T.S. Low, in: Handbook on Semiconductors. Characterization and Properties of Semiconductors, Eds. T.S. Moss, S. Mahajan, Elsevier, Amsterdam 1994, p. 874
  • 9. A. Vandooren, S. Cristoloveanu, J.P. Colinge, in: 2000 IEEE Int. SOI Conf., Wakefield, DOI: 10.1109/SOI.2000.892798, p. 118
  • 10. R.L. Petritz, Phys. Rev. 110, 1254 (1958)
  • 11. R.D. Larrabee, W.R. Thurber, IEEE Trans. Electron Dev. ED-27, 32 (1980)
  • 12. Z. Bougrioua, M. Azize, P. Gibart, T. Malinauskas, K. Neimontas, A. Mekys, J. Storasta, K. Jarašiūnas, J. Cryst. Growth 300, 228 (2007)
  • 13. J.H.M. ten Thije Boonkkamp, W.H.A. Shilders, in: Numerical Device Simulation, Japan Study Tour 1993, DOI: 10.1108/eb010116
  • 14. V.V. Gorbachev, L.G. Spicina, Physics of Semiconductors and Metals, Metalurgia Moskva 1976, p. 369 (in Russian)
  • 15. A. Dargys, J. Kundrotas, Handbook on Physical Properties of Ge, Si, GaAs and InP, Science and Encyclopedia Publishers, Vilnius 1994, p. 263
  • 16. H. Sitter, T. Nguyen Manh, Cryst. Res. Technol. 34, 605 (1999)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n424kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.