Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

• Authors: S. Lazzez , K. Boubaker , T. Ben Nasrallah , M. Amlouk , S. Belgacem , M. Mnari , R. Chtourou
• Languages of publication: EN

Abstracts

EN

In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320°C. The molar ratio between zinc and indium x=[Zn^{2+}]/[In^{3+}] was varied in 0-0.4 domain whereas [S^{2-}]/[In^{3+}] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material In_2S_3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn_2S_4. On the contrary, for x=0.4, the film is mainly formed by the ternary compound ZnIn_2S_4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy E_g increases slightly as a function of the x composition (E_g varies from 2.6 to 2.9 eV).

Keywords

EN

79.60.Dp; 78.66.Li; 78.30.Am

Discipline

• 79.60.Dp: Adsorbed layers and thin films
• 78.30.Am: Elemental semiconductors and insulators
• 78.66.Li: Other semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 4
• Pages: 869-880

Dates

published

2008-10

received

2008-05-14

Contributors

author

S. Lazzez

• Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia

author

K. Boubaker

• Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia

author

T. Ben Nasrallah

• Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia

author

M. Amlouk

• Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia

author

S. Belgacem

• Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia

author

M. Mnari

• Laboratoire de Chimie Analytique et d'Electrochimie, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia

author

R. Chtourou

• Laboratoire de Photovolta"ique et des Matériaux Semiconducteurs, Institut National de Recherche Scientifique et Technique (INRST), Hammam-Lif, Tunisia

References

• 1. T.T. John, M. Mathew, C.S. Kartha, K.P. Vijayakumar, T. Abe, Y. Kashiwaba, Solar Energy Mater. Solar Cells 89, 27 (2005)
• 2. L. Bhira, T. Ben Nasrallah, J.C. Bernède, S. Belgacem, Mater. Chem. Phys. 72, 320 (2001)
• 3. O. Vigil, O. Calzadilia, D. Seuret, J. Vidal, Solar Energy Mater. 10, 139 (1984)
• 4. S.A. Lopez-Rivera, A.J. Mora, D. Acosta Najorro, A.V. Rivera, R. Avila Godoy, Semicond. Sci. Technol. 16, 367 (2001)
• 5. E.J. Johnson, Semicond. Semimetals 3, 153 (1967)
• 6. A. Serpi, J. Phys. D, Appl. Phys. 9, 1881 (1976)
• 7. A. Bosacchi, B. Bosacchi, S. Franchi, L. Hernandez, Solid State Commun. 13, 1805 (1973)
• 8. M. Guzzi, E. Grilli, Mater. Chem. Phys. (Elsevier) 11, 295 (1984)
• 9. S.I. Radautsan, V.F. Zhitar, V.G. Railyan, Sov. Phys. Semicond. 9, 1476 (1976)
• 10. L. Bhira, H. Essaidi, S. Belgacem, G. Couturier, J. Salerdenne, N. Barreau, J.C. Bernède, Phys. Status Solidi A 181, 427 (2000)
• 11. L. Bhira, S. Belgacem, J.C. Bernède, J. Appl. Phys. 92, 5327 (2002)
• 12. N.F. Mott, R.W. Gurney, Electronics Process in Ionic Crystals, New York 1940
• 13. S. Belgacem, R. Bennaceur, Rev. Phys. Appl. 25, 1245 (1990)
• 14. H. Mathieu, Physique des semiconducteurs et des composants eléctroniques, Ed. Masson, Paris 1996, p. 463
• 15. M. Bouaziz, J. Ourfelli, M. Amlouk, S. Belgacem, Phys. Status Solidi A 204, 3354 (2007)

Identifiers

DOI

10.12693/APhysPolA.114.869