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2008 | 114 | 4 | 869-880
Article title

Structural and Optoelectronic Properties of In-Zn-S sprayed Layers

Content
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Languages of publication
EN
Abstracts
EN
In this work, In-Zn-S thin layers were prepared using the spray pyrolysis technique on glass substrates at 320°C. The molar ratio between zinc and indium x=[Zn^{2+}]/[In^{3+}] was varied in 0-0.4 domain whereas [S^{2-}]/[In^{3+}] one was taken constant equal to 2. The atomic composition was carried out with the atomic absorption. The structural study of all layers via X-ray diffraction and atomic force microscopy shows that the layer, obtained using x=0 is formed by binary material In_2S_3 with a principal orientation along (400). When the composition increases the same study depicts the presence of other materials such as ZnO, ZnS, and ZnIn_2S_4. On the contrary, for x=0.4, the film is mainly formed by the ternary compound ZnIn_2S_4 which crystallizes in cubic phase. Moreover, the optical analysis via the transmittance, reflectance as well as the photocurrent reveals that the band gap energy E_g increases slightly as a function of the x composition (E_g varies from 2.6 to 2.9 eV).
Keywords
EN
Publisher

Year
Volume
114
Issue
4
Pages
869-880
Physical description
Dates
published
2008-10
received
2008-05-14
Contributors
author
  • Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia
author
  • Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia
  • Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia
author
  • Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia
author
  • Unité de Physique des Dispositifsá Semiconducteurs, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia
author
  • Laboratoire de Chimie Analytique et d'Electrochimie, - Faculté des Sciences de Tunis, Université de Tunis El Manar, 2092 Tunis, Tunisia
author
  • Laboratoire de Photovolta"ique et des Matériaux Semiconducteurs, Institut National de Recherche Scientifique et Technique (INRST), Hammam-Lif, Tunisia
References
  • 1. T.T. John, M. Mathew, C.S. Kartha, K.P. Vijayakumar, T. Abe, Y. Kashiwaba, Solar Energy Mater. Solar Cells 89, 27 (2005)
  • 2. L. Bhira, T. Ben Nasrallah, J.C. Bernède, S. Belgacem, Mater. Chem. Phys. 72, 320 (2001)
  • 3. O. Vigil, O. Calzadilia, D. Seuret, J. Vidal, Solar Energy Mater. 10, 139 (1984)
  • 4. S.A. Lopez-Rivera, A.J. Mora, D. Acosta Najorro, A.V. Rivera, R. Avila Godoy, Semicond. Sci. Technol. 16, 367 (2001)
  • 5. E.J. Johnson, Semicond. Semimetals 3, 153 (1967)
  • 6. A. Serpi, J. Phys. D, Appl. Phys. 9, 1881 (1976)
  • 7. A. Bosacchi, B. Bosacchi, S. Franchi, L. Hernandez, Solid State Commun. 13, 1805 (1973)
  • 8. M. Guzzi, E. Grilli, Mater. Chem. Phys. (Elsevier) 11, 295 (1984)
  • 9. S.I. Radautsan, V.F. Zhitar, V.G. Railyan, Sov. Phys. Semicond. 9, 1476 (1976)
  • 10. L. Bhira, H. Essaidi, S. Belgacem, G. Couturier, J. Salerdenne, N. Barreau, J.C. Bernède, Phys. Status Solidi A 181, 427 (2000)
  • 11. L. Bhira, S. Belgacem, J.C. Bernède, J. Appl. Phys. 92, 5327 (2002)
  • 12. N.F. Mott, R.W. Gurney, Electronics Process in Ionic Crystals, New York 1940
  • 13. S. Belgacem, R. Bennaceur, Rev. Phys. Appl. 25, 1245 (1990)
  • 14. H. Mathieu, Physique des semiconducteurs et des composants eléctroniques, Ed. Masson, Paris 1996, p. 463
  • 15. M. Bouaziz, J. Ourfelli, M. Amlouk, S. Belgacem, Phys. Status Solidi A 204, 3354 (2007)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n422kz
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