Analytic Equation of State and Thermodynamic Properties, for α-, β-, and γ-Si₃N₄ Based on Analytic Mean Field Approach

• Authors: L. Wang , J. Sun , W. Yang , R. Tian
• Languages of publication: EN

Abstracts

EN

The analytic mean field potential approach is applied to α-, β-, and γ-Si₃N₄. The analytic expressions for the Helmholtz free energy, internal energy, and equation of state were derived. The formalism for the case of the Morse potential is used in this work. Its six potential parameters are determined through fitting the compression experimental data of α-, β-, and γ-Si₃N₄. The calculated compression curves of α-, β-, and γ-Si₃N₄ are in good agreement with the available experimental data. This suggests that the analytic mean field potential approach is a very useful approach to study the thermodynamic properties of Si₃N₄. Furthermore, we predict the variation of the free energy and internal energy with the molar volume at several higher temperatures and calculate the temperature dependence of the molar volume, bulk modulus, thermal expansion coefficient and isochoric heat capacity at zero pressure.

Keywords

EN

64.10.+h; 65.40.-b; 61.66.Fn

Discipline

• 65.40.-b: Thermal properties of crystalline solids
• 64.10.+h: General theory of equations of state and phase equilibria(see also 05.70.Ce Thermodynamic functions and equations of state)
• 61.66.Fn: Inorganic compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 4
• Pages: 807-818

Dates

published

2008-10

received

2008-01-07

(unknown)

2008-04-15

(unknown)

2008-05-19

Contributors

author

L. Wang

• Department of Applied Physics, University of Electronic Science and Technology, Chengdu 610054, P.R. China

author

J. Sun

• Department of Applied Physics, University of Electronic Science and Technology, Chengdu 610054, P.R. China

author

W. Yang

• Department of Applied Physics, University of Electronic Science and Technology, Chengdu 610054, P.R. China

author

R. Tian

• Department of Applied Physics, University of Electronic Science and Technology, Chengdu 610054, P.R. China

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Identifiers

DOI

10.12693/APhysPolA.114.807