Superdiffusion in Si Crystal Lattice Irradiated by Soft X-Rays

• Authors: A. Janavičius , S. Balakauskas , V. Kazlauskienė , A. Mekys , R. Purlys , J. Storasta
• Languages of publication: EN

Abstracts

EN

We considered the reasons of superdiffusivity and measured profiles of boron and phosphorus in crystalline silicon at room temperature. The superdiffusivity or ultrafast diffusion of metastable vacancies at room temperature in Si crystal irradiated by soft X-rays was obtained experimentally. In this work, we presented experimentally obtained diffusion coefficients of singly and doubly negatively charged long-lived excited vacancies. These high concentration charged metastable vacancies (about 10^{13} cm^{-3}) at room temperature can very fast diffuse changing electrical conductivity and the Hall mobility of carriers. We measured the superdiffusivity of negatively charged vacancies, generated by the Auger effect in the regions of the sample, which were not affected by X-rays. In this paper, we presented the obtained superdiffusion profiles of boron and phosphorus in crystalline silicon measured with secondary-ion mass spectrometer.

Keywords

EN

66.30.-h; 78.70.Ck

Discipline

• 78.70.Ck: X-ray scattering
• 66.30.-h: Diffusion in solids(for surface and interface diffusion, see 68.35.Fx)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 4
• Pages: 779-790

Dates

published

2008-10

received

2007-06-25

(unknown)

2008-06-11

Contributors

author

A. Janavičius

• Faculty of Natural Sciences, Šiauliai University, P. Višinskio 19, 77156 Šiauliai, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Goštauto 11, 2600 Vilnius, Lithuania

author

V. Kazlauskienė

• Institute of Material Science and Applied Researches, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania

author

A. Mekys

• Faculty of Physics, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania

author

R. Purlys

• Faculty of Physics, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania

author

J. Storasta

• Institute of Material Science and Applied Researches, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania
• Faculty of Physics, Vilnius University, Saulėtekio al. 9, bld. 3, 2040 Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.114.779