Zr, ZrN and Zr/Al Thin Films Deposition Using Arc Evaporation and Annealing

• Authors: J. Čyvienė , J. Dudonis
• Languages of publication: EN

Abstracts

EN

The chemical reactions are widely used for the layers of different composition formation. However, synthesis mechanism is a complicated process in thin films/layers system, and is not completely studied. The purpose of this paper was to analyze the kinetics of chemical compounds in reaction, to produce ZrO₂ thin films using arc evaporation and annealing (post-deposition), and to analyze them. The pure zirconium (Zr) and zirconium nitride (ZrN) were deposited using arc evaporation. 10% mol of aluminum was evaporated on a few Zr films. All deposited films were annealed in the air atmosphere gradually changing the temperature from 400°C to 1100°C in order to produce ZrO₂ films. The formation processes of the new phase were studied. Activation energy of the reactions was calculated. Structural properties were measured using X-ray diffraction, optical properties - using ellipsometry. Tetragonal phase of ZrO₂ was obtained in the annealing process of ZrO₂/Al thin film in the air atmosphere of 800°C.

Keywords

EN

51.10.+y; 81.15.Ef; 83.80.Ab

Discipline

• 51.10.+y: Kinetic and transport theory of gases(see also 05.20.Dd Kinetic theory in classical statistical mechanics; see also 47.70.Mc Radiation gas dynamics)
• 83.80.Ab: Solids: e.g., composites, glasses, semicrystalline polymers

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 4
• Pages: 769-777

Dates

published

2008-10

received

2007-11-14

(unknown)

2008-03-12

Contributors

author

J. Čyvienė

• Department of Physics, Kaunas University of Technology, Studentu 50, LT-51368 Kaunas, Lithuania

author

J. Dudonis

• Department of Physics, Kaunas University of Technology, Studentu 50, LT-51368 Kaunas, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.114.769