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2008 | 114 | 4 | 713-719

Article title

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

Authors

Content

Title variants

Languages of publication

EN

Abstracts

EN
ZnS nanocrystalline thin films were grown into the polyvinyl alcohol matrix and were synthesized by chemical route. Films were prepared on glass substrate by varying the deposition parameters and pH of the solution. Nanocrystalline thin film prepared under optimum growth conditions shows band gap value 3.88 eV as observed from optical absorption data. The band gap is found to be higher (3.88 eV) indicating blue shift. The particle size, calculated from the shift of direct band gap, due to quantum confinement effect is 5.8 nm. Photoluminescence spectrum shows the blue luminescence peaks (centered at 425 nm), which can be attributed to the recombination of the defect states. ZnS nanocrystalline thin films are also found to be photosensitive in nature. However, the photosensitivity decreases due to ageing and exposure to oxygen. In case of nanostructured film, the I-V characteristics are observed in dark and under illumination showing photosensitive nature of these films, too. The dark current, however, is found to be greater when observed in vacuum compared to air. Both dark current and photocurrent are found to be ohmic in nature up to a certain applied bias. The observed data shows that nanostructured films are found to be suitable for device application. The surface morphology of the film is also characterized by scanning electron microscope.

Keywords

EN

Year

Volume

114

Issue

4

Pages

713-719

Physical description

Dates

published
2008-10
received
2008-04-03

Contributors

author
  • Department of Instrumentation and USIC, Guwahati University, Guwahati, Assam, 781014, India
author
  • Department of Instrumentation and USIC, Guwahati University, Guwahati, Assam, 781014, India

References

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Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv114n407kz
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