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2008 | 114 | 4 | 713-719
Article title

Optical and Optoelectronic Properties of ZnS Nanostructured Thin Film

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Languages of publication
EN
Abstracts
EN
ZnS nanocrystalline thin films were grown into the polyvinyl alcohol matrix and were synthesized by chemical route. Films were prepared on glass substrate by varying the deposition parameters and pH of the solution. Nanocrystalline thin film prepared under optimum growth conditions shows band gap value 3.88 eV as observed from optical absorption data. The band gap is found to be higher (3.88 eV) indicating blue shift. The particle size, calculated from the shift of direct band gap, due to quantum confinement effect is 5.8 nm. Photoluminescence spectrum shows the blue luminescence peaks (centered at 425 nm), which can be attributed to the recombination of the defect states. ZnS nanocrystalline thin films are also found to be photosensitive in nature. However, the photosensitivity decreases due to ageing and exposure to oxygen. In case of nanostructured film, the I-V characteristics are observed in dark and under illumination showing photosensitive nature of these films, too. The dark current, however, is found to be greater when observed in vacuum compared to air. Both dark current and photocurrent are found to be ohmic in nature up to a certain applied bias. The observed data shows that nanostructured films are found to be suitable for device application. The surface morphology of the film is also characterized by scanning electron microscope.
Keywords
EN
Publisher

Year
Volume
114
Issue
4
Pages
713-719
Physical description
Dates
published
2008-10
received
2008-04-03
Contributors
author
  • Department of Instrumentation and USIC, Guwahati University, Guwahati, Assam, 781014, India
author
  • Department of Instrumentation and USIC, Guwahati University, Guwahati, Assam, 781014, India
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n407kz
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