Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

• Authors: K. Wieteska , A. Misiuk , M. Prujszczyk , W. Wierzchowski , B. Surma , J. Bąk-Misiuk , P. Romanowski , A. Shalimov , I. Capan , D. Yang , W. Graeff
• Languages of publication: EN

Abstracts

EN

Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.

Keywords

EN

61.05.c-; 61.72.-y; 61.82.-d

Discipline

• 61.82.-d: Radiation effects on specific materials
• 61.72.-y: Defects and impurities in crystals; microstructure(for radiation induced defects, see 61.80.-x; for defects in surfaces, interfaces, and thin films, see 68.35.Dv and 68.55.Ln; see also 85.40.Ry Impurity doping, diffusion, and ion implantation technology; for effects of crystal defects and doping on superconducting transition temperature, see 74.62.Dh)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 2
• Pages: 439-446

Dates

published

2008-08

received

2007-09-24

Contributors

author

K. Wieteska

• Institute of Atomic Energy, 05-400 Otwock,Świerk, Poland

author

A. Misiuk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Prujszczyk

• Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Wierzchowski

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

B. Surma

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

author

J. Bąk-Misiuk

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

P. Romanowski

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

A. Shalimov

• Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland

author

I. Capan

• Materials Physics, Rudjer Boskovic Institute, 10000 Zagreb, Croatia

author

D. Yang

• State Key Laboratory of Silicon Materials, Zhenjiang University, Hangzhou 310027, China

author

W. Graeff

• HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany

References

• 1. . D. Yang, Phys. Status Solidi A 202, 931 (2005)
• 2. A. Misiuk, B. Surma, C.A. Londos, J. Bak-Misiuk, W. Wierzchowski, K. Wieteska, W. Graeff, Phys. Status Solidi C 2, 1812 (2005)
• 3. A. Misiuk, B. Surma, J. Bak-Misiuk, C.A. Londos, P. Vagovic, I. Kovacevic, B. Pivac, W. Jung, M. Prujszczyk, Radiat. Measur. 42, 688 (2007)
• 4. A. Misiuk, B. Surma, J. Bak-Misiuk, I.V. Antonova, S.A. Smagulova, Vacuum 77, 513 (2005)
• 5. A. Misiuk, B. Surma, A. Wnuk, C.A. Londos, A. Bukowski, Cryst. Res. Techn. 40, 1812 (2005)
• 6. A. Misiuk, B. Surma, J. Hartwig, Mater. Sci. Eng. B 36, 30 (1996)
• 7. M. Moreno, B. Jenichen, V. Kaganer, W. Braun, A. Trampert, L. Daweritz, K.H. Ploog, Phys. Rev. B 67, 235206 (2003)
• 8. U. Pietch, V. Holý, T. Baumbach, High Resolution X-Ray Scattering from Thin Films and Multilayers, Springer-Verlag, Berlin 2004, p. 170

Identifiers

DOI

10.12693/APhysPolA.114.439