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2008 | 114 | 2 | 439-446
Article title

Revealing the Defects Introduced in N- or Ge-doped Cz-Si by γ Irradiation and High Temperature-High Pressure Treatment

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Languages of publication
EN
Abstracts
EN
Effect of processing under high hydrostatic pressure (= 1.1 GPa), applied at 1270 K, on Czochralski grown silicon with interstitial oxygen content (c_O) up to 1.1×10^{18} cm^{-3}, admixed with N or Ge (Si-N, c_N ≤ 1.2×10^{15} cm^{-3}, or Si-Ge, c_{Ge} ≈ 7×10^{17} cm^{-3}, respectively), pre-annealed at up to 1400 K and next irradiated withγ-rays (dose, D up to 2530 Mrad, at energy E = 1.2 MeV), was investigated by high resolution X-ray diffraction, Fourier transform infrared spectroscopy, and synchrotron topography. Processing of γ-irradiated Si-N and Si-Ge under high pressure leads to stimulated precipitation of oxygen at the nucleation sites created by irradiation. It means that radiation history of Si-N and Si-Ge can be revealed by appropriate high temperature-high pressure processing.
Keywords
EN
Contributors
author
  • Institute of Atomic Energy, 05-400 Otwock,Świerk, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Electron Technology, al. Lotników 32/46, 02-668 Warsaw, Poland
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
author
  • Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Institute of Physics, PAS, al. Lotników 32/46, 02-668 Warsaw, Poland
author
  • Materials Physics, Rudjer Boskovic Institute, 10000 Zagreb, Croatia
author
  • State Key Laboratory of Silicon Materials, Zhenjiang University, Hangzhou 310027, China
author
  • HASYLAB at DESY, Notkestr. 85, 22603 Hamburg, Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n215kz
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