X-Ray High-Resolution Diffraction and Transmission Topography Study of InGaAs Grown by Liquid Encapsulated Czochralski Technique

• Authors: G. Kowalski , J. Gronkowski , J. Borowski , A. Hruban
• Languages of publication: EN

Abstracts

EN

New results on ternary InGaAs crystals grown using liquid encapsulated Czochralski technique with constant liquid composition are reported. X-ray high-resolution diffractometry (rocking curves and reciprocal space maps) as well as X-ray topography using the transmission Lang setup were used. Growth history of the bulk ingots was revealed.

Keywords

EN

61.72.Dd; 07.85.Jy; 81.10.Fq

Discipline

• 81.10.Fq: Growth from melts; zone melting and refining
• 07.85.Jy: Diffractometers
• 61.72.Dd: Experimental determination of defects by diffraction and scattering

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 114
• Issue: 2
• Pages: 391-398

Dates

published

2008-08

received

2007-09-24

Contributors

author

G. Kowalski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Gronkowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

J. Borowski

• Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland

author

A. Hruban

• Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland

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Identifiers

DOI

10.12693/APhysPolA.114.391