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Abstracts
New results on ternary InGaAs crystals grown using liquid encapsulated Czochralski technique with constant liquid composition are reported. X-ray high-resolution diffractometry (rocking curves and reciprocal space maps) as well as X-ray topography using the transmission Lang setup were used. Growth history of the bulk ingots was revealed.
Discipline
Journal
Year
Volume
Issue
Pages
391-398
Physical description
Dates
published
2008-08
received
2007-09-24
Contributors
author
- Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Experimental Physics, University of Warsaw, Hoża 69, 00-681 Warsaw, Poland
author
- Institute of Electronic Materials Technology, Wólczyńska 133, 01-919 Warsaw, Poland
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n210kz