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Abstracts
We derive a doped carrier representation of the t-J model Hamiltonian. Within this approach the t-J model is described in terms of holes hopping in a lattice of correlated spins, where holes are the carriers doped into the half-filled Mott insulator. This representation of the t-J Hamiltonian is very convenient for underdoped systems since close to half-filling it allows for a controlled treatment of the crucial constraint of no doubly occupied sites. When neglecting the transverse spin-spin interaction, the effective Hamiltonian can be investigated with classical Monte Carlo simulations. We discuss the results obtained for systems consisting of several hundred lattice sites.
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Pages
185-189
Physical description
Dates
published
2008-07
received
2007-11-06
Contributors
author
- International Center of Condensed Matter Physics, Universidade de Brasilia, Caixa Postal 04667, 70910-900 Brasilia, DF, Brazil
author
- International Center of Condensed Matter Physics, Universidade de Brasilia, Caixa Postal 04667, 70910-900 Brasilia, DF, Brazil
- Bogolyubov Theoretical Laboratory, Joint Institute for Nuclear Research, 141980 Dubna, Russia
author
- Institute of Physics, University of Silesia, 40-007 Katowice, Poland
author
- Institute of Physics, University of Silesia, 40-007 Katowice, Poland
References
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- 2. A. Ferraz, E. Kochetov, M. Mierzejewski, Phys. Rev. B 73, 064516 (2006);T.C. Ribeiro, X.-G. Wen, Phys. Rev. Lett. 95, 057001 (2005);A. Ferraz, E. Kochetov, B. Uchoa, Phys. Rev. Lett. 98, 069701 (2007)
- 3. M.M. Maśka, K. Czajka, Phys. Rev. B 74, 035109 (2006)
- 4. M.M. Maśka,Ż.Śledź, K. Czajka, M. Mierzejewski, Phys. Rev. Lett. 99, 147006 (2007)
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Publication order reference
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv114n127kz