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2008 | 114 | 1 | 7-14
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Stabilization of Kondo Semiconductor State by Sb Doping of CeNi_{1-δ}Sn_{1+δ} and the General Criterion of Its Appearance

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Semimetallic off-stoichiometric CeNi_{1-δ}Sn_{1+δ-x}Sb_x system with δ≈0.06 is shown to transform into a Kondo semiconductor upon the substitution of few percent of Sb for Sn. The full-gap formation is associated with f-electron localization induced by the combined effect of the collective Kondo-singlet formation and the atomic disorder. Namely, the extra valence electrons introduced with the Sb doping (one per Sb atom) contribute additionally to the formation of the collective Kondo spin-singlet state at low temperatures, as seen by a substantial reduction of the magnetic susceptibility. The precise general definition of the Kondo semiconductor is provided and the difference with either the simple band or the Mott-Hubbard insulators is stressed.
  • Marian Smoluchowski Institute of Physics, Jagiellonian University, Reymonta 4, 30-059 Kraków, Poland
  • Institute of Physics, University of Silesia, Uniwersytecka 4, 40-007 Katowice, Poland
  • 1. S.K. Malik, D.T. Adroja, Phys. Rev. B 43, 6277 (1991);H. Kumigashira, T. Sato, T. Takahashi, S. Yoshii, M. Kasaya, Phys. Rev. Lett. 82, 1943 (1999)
  • 2. Cf. e.g. T. Takabatake, F. Teshima, H. Fuji, S. Nishigori, T. Suzuki, T. Fujita, Y. Yamaguchi, J. Sakuray, D. Jackard, Phys. Rev. B 41, 9607 (1990);in the monocrystalline samples a plateau in temperature dependence ofρ(T ) has been observed, see: T.E. Mason, G. Aeppli, A.P. Ramirez, K.N. Clausen, C. Broholm, N. Stúcheli, E. Bucher, T.T.M. Paalstra, Phys. Rev. Lett. 69, 490 (1992);see also G. Nakamoto, T. Takabatake, H. Fuji, A. Minami, K. Maezawa, I. Oguro, A.A. Menovsky, J. Phys. Soc. Japan 64, 4834 (1995)
  • 3. (a) A.Ślebarski, J. Spałek, Phys. Rev. Lett. 95, 046402 (2005);(b) J. Spałek, A.Ślebarski, J. Goraus, L. Spałek, K. Tomala, A. Zarzycki, A. Hackemer, Phys. Rev. B 72, 155112 (2005)
  • 4. The Kondo insulator composed of a filled hybridized band of heavy quasiparticles has been considered in: S. Doniach, P. Fazekas, Adv. Phys. 65, 1171 (1992);R. Doradziński J. Spałek, Phys. Rev. B 56, R14239 (1997);ibid. 58, 3293 (1998). For a brief review see: J. Spałek, R. Doradziński, Acta Phys. Pol. A 96, 677 (1999);ibid. , 97 (2071) 00
  • 5. A similar effect has been observed for CeNiSn doped with Cu, Co, and Pt, see: T. Takabatake, Y. Echizen, T. Yoshino, K. Kobayashi, G. Nakamoto, H. Fujii, M. Sera, Phys. Rev. B 59, 13878 (1999);see also: F.G. Aliev, V.V. Moshchalkov, M.K. Zalyalyutdinov, G.I. Pak, R.V. Scolozdra, P.A. Alekseev, V.N. Lazukov, I.P. Sadikov, Physica B 163, 358 (1990);T. Enstra, G.J. Nieuwenhuys, K.H.J. Buschow, J. Mydosh, J. Magn. Magn. Mater. 108, 69 (1992)
  • 6. The effect of inclusions in CeNiSn has been discussed by Mason et al. in Ref. [2];see also: G. Nakamoto, T. Takabatake, Y. Bando, F. Fuji, K. Izawa, T. Suzuki, T. Fujita, A. Minami, I. Oguro, L.T. Tai, A.A. Menovsky, Physica B 206-207, 840 (1995);G. Nakamoto, T. Takabatake, F. Fuji, A. Minami, K. Maezawa, I. Oguro, A.A. Menovsky, J. Phys. Soc. Japan 64, 4834 (1995)
  • 7. A.Ślebarski, J. Spałek, M. Gamża, A. Hackemer, Phys. Rev. B 73, 205115 (2006)
  • 8. B. Buschinger, M. Weiden, O. Trovarelli, P. Hellmann, C. Geibel, F. Steglich, J. Phys., Condens. Matter 10, 2021 (1998)
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