Depth Profiling of Defects in He Implanted SiO_2

• Authors: S. Mariazzi , L. Toniutti , R. Brusa , M. Duarte Naia , A. Karbowski , G. Karwasz
• Languages of publication: EN

Abstracts

EN

Thin layer of SiO_2 thermally grown on p-type Si was implanted with He^+ ions at 30 keV with a dose of 5×10^{15} ions/cm^2. SiO_2/Si samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.

Keywords

EN

71.60.+z; 78.70.Bj; 68.55.-a; 61.82.Ms; 61.72.J-

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 71.60.+z: Positron states(for positron annihilation, see 78.70.Bj)
• 61.82.Ms: Insulators
• 61.72.J-: Point defects and defect clusters
• 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 5
• Pages: 1447-1453

Dates

published

2008-05

received

2007-09-03

Contributors

author

S. Mariazzi

• Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy

author

L. Toniutti

• Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy

author

R. Brusa

• Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy

author

M. Duarte Naia

• Dep. Física, Universidade de Trás-os Montes e Alto Douro, 5001-801 Vila Real, Portugal

author

A. Karbowski

• Instytut Fizyki, Uniwersytet Mikołaja Kopernika, 87-100 Toruń, Poland

author

G. Karwasz

• Instytut Fizyki, Uniwersytet Mikołaja Kopernika, 87-100 Toruń, Poland

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Identifiers

DOI

10.12693/APhysPolA.113.1447