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Article title
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Abstracts
Thin layer of SiO_2 thermally grown on p-type Si was implanted with He^+ ions at 30 keV with a dose of 5×10^{15} ions/cm^2. SiO_2/Si samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
Discipline
- 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
- 71.60.+z: Positron states(for positron annihilation, see 78.70.Bj)
- 61.82.Ms: Insulators
- 61.72.J-: Point defects and defect clusters
- 68.55.-a: Thin film structure and morphology(for methods of thin film deposition, film growth and epitaxy, see 81.15.-z)
Journal
Year
Volume
Issue
Pages
1447-1453
Physical description
Dates
published
2008-05
received
2007-09-03
Contributors
author
- Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy
author
- Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy
author
- Dipartimento di Fisica, Universitàdegli Studi di Trento, 38050 Povo, Trento, Italy
author
- Dep. Física, Universidade de Trás-os Montes e Alto Douro, 5001-801 Vila Real, Portugal
author
- Instytut Fizyki, Uniwersytet Mikołaja Kopernika, 87-100 Toruń, Poland
author
- Instytut Fizyki, Uniwersytet Mikołaja Kopernika, 87-100 Toruń, Poland
References
- 1. P. Asoka-Kumar, K.G. Lynn, D.O. Welch, J. Appl. Phys. 76, 4935 (1994)
- 2. R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors, Springer Series in Solid-State Sciences, Springer, Berlin 1999
- 3. P.M. Petkov, P.G. Lynn, A. van Veen, Phys. Rev. B 66, 045322 (2002)
- 4. J. Kuriplach, W. Anwand, G. Brauer, W. Skorupa, Appl. Surf. Sci. 194, 84 (2002)
- 5. G. Brauer, W. Anwand, W. Skorupa, A.G. Revesz, J. Kuriplach, Phys. Rev. B 66, 195331 (2002)
- 6. G. Brauer, F. Becvar, W. Anwand, W. Skorupa, Appl. Surf. Sci. 252, 3368 (2006)
- 7. G. Brauer, J. Kuriplach, O. Melikhova, W. Anwand, F. Becvar, W. Skorupa, Radiat. Phys. Chem. 76, 195 (2007)
- 8. R. Suzuki, T. Ohdaira, A. Uedono, Y. Kobayashi, Appl. Surf. Sci. 194, 89 (2002)
- 9. R. Suzuki, T. Ohdaira, Y. Kobayashi, K. Ito, Y. Shioya, T. Ishimaru, Radiat. Phys. Chem. 68, 339 (2003)
- 10. X.D. Pi, P.G. Coleman, R. Harding, G. Davies, R.M. Gwilliam, B.J. Sealy, Physica B 340-342, 1094 (2003)
- 11. X.D. Pi, P.G. Coleman, R. Harding, G. Davies, R.M. Gwilliam, J. Appl. Phys. 95, 8155 (2004)
- 12. D.B. Cassidy, K.T. Yokoyama, S.H.M. Deng, D.L. Griscom, H. Miyadera, H.W.K. Tom, C.M. Varma, A.P. Mills Jr. Phys. Rev. B 75, 085415 (2007)
- 13. M. Fujinami, N.B. Chilton, K. Ishi, Y. Ohki, J. Phys. IV 3, 169 (1993)
- 14. M. Fujinami, N.B. Chilton, Appl. Phys. Lett. 62, 1131 (1993)
- 15. P.J. Simpson, M. Spooner, H. Xia, A.P. Knights, J. Appl. Phys. 85, 1765 (1999)
- 16. G. Ghislotti, B. Nielsen, P. Asoka-Kumar, P.G. Lynn, C.E. Bottani, S. Bertoni, G.F. Cerofolini, L. Meda, Thin Solid Films 276, 210 (1996)
- 17. R. Suzuki, Y. Kobayashi, K. Awazu, T. Mikado, M. Chuwaki, H. Ohgaki, T. Yamazaki, Nucl. Instrum. Methods Phys. Res. B 91, 410 (1994)
- 18. H. Assaf, E. Ntsoenzok, M.-F. Barthe, M.-O. Ruault, T. Sauvage, S. Ashok, Nucl. Instrum. Methods Phys. Res. B 253, 222 (2006)
- 19. R.S. Brusa, G.P. Karwasz, G. Mariotto, A. Zecca, R. Ferragut, P. Folegati, A. Dupasquier, G. Ottavini, R. Tonini, J. Appl. Phys. 94, 7483 (2003)
- 20. A. Uedono, L. Wei, S. Tanigawa, R. Suzuki, H. Ohgaki, T. Mikado, K. Fujino, J. Appl. Phys. 75, 216 (1994)
- 21. M. Fujinami, T. Miyagoe, T. Sawada, T. Akahane, J. Appl. Phys. 94, 4382 (2003)
- 22. C. Macchi, S. Mariazzi, G.P. Karwasz, R.S. Brusa, P. Folegati, S. Frabboni, G. Ottaviani, Phys. Rev. B 74, 174120 (2006)
- 23. A. Zecca, M. Bettonte, J. Paridaens, G.P. Karwasz, R.S. Brusa, Meas. Sci. Technol. 9, 1 (1998)
- 24. A. van Veen, H. Schut, J. de Vries, R.A. Hakvoort, M.R. Ijpma, AIP Conf. Proc. 218, 171 (1990)
- 25. R.S. Brusa, W. Deng, G.P. Karwasz, A. Zecca, Solid State Phenom. 82-84, 81 (2002)
- 26. R.S. Brusa, G.P. Karwasz, N. Tiengo, A. Zecca, F. Corni, R. Tonini, G. Ottaviani, Phys. Rev. B 61, 10154 (2000)
- 27. M. Hakala, M.J. Puska, R.M. Nieminen, Phys. Rev. B 57, 7621 (1998)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n523kz