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2008 | 113 | 5 | 1373-1378
Article title

Study on the Structure of Defects in a-Si:H Films by Positron Annihilation and Micro-Raman Spectroscopy

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EN
Abstracts
EN
Thin films of hydrogenated amorphous silicon deposited on glass and crystalline silicon substrates by rf plasma enhanced chemical vapor deposition at different rf power were studied using slow positron beam and the Raman scattering spectroscopy in order to verify the influence of that deposition parameter on the film defect structure and on the degree of disorder. By positron annihilation spectroscopy, it was found that there are mainly two types of defects in the films: large vacancy clusters or voids and small vacancy type defects. By micro-Raman spectroscopy it was observed that the degree of structural disorder is lower for the film with large vacancy clusters and this finding was related to structural relaxation process. Light soaking induced changes attributed to major atomic rearrangements were also observed.
Keywords
EN
Contributors
author
  • ICEMS, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal
author
  • ICEMS, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal
  • ICEMS, Department of Physics, University of Coimbra, P-3004-516 Coimbra, Portugal
  • Depart. Eng. Quimica, Instituto Superior Engenharia, P-3031-199 Coimbra, Portugal
author
  • KFKI Res. Inst. for Nucl. and Part. Physics, P.O. Box 49, H-1525 Budapest 114, Hungary
References
  • 1. J.R. Abelson, Appl. Phys. A 56, 493 (1993)
  • 2. Y. Hiroyama, R. Suzuki, Y. Hirano, F. Sato, T. Motooka, Jpn. J. Appl. Phys. 34, 5515 (1995)
  • 3. D. Beeman, T. Tsu, M.F. Thorpe, Phys. Rev. B 36, 874 (1985)
  • 4. R. Biswas, Y.P. Li, Phys. Rev. Lett. 82, 2512 (1999)
  • 5. A.P. de Lima, C. Lopes Gil, P.M. Gordo, M. Duarte Naia, in: Workshop on Ion and Slow Positron Beam Utilization, OECD/NEA, Costa da Caparica (Portugal) 1998, p. 121
  • 6. A. van Veen, H. Schut, J. Haakvoort, R.A.Vries, M.R. Ijpma, AIP Conf. Proc. 218, 171 (1990)
  • 7. X. Zou, Y.C. Chan, D.P. Webb, Y.W. Lam, Y.F. Hu, C.B. Beling, S. Fung, H.M. Weng, Phys. Rev. Lett. 84, 769 (2000)
  • 8. G. Amarendra, Defects Diff. Semicond. IV 200-202, 189 (2002)
  • 9. P.M. Gordo, M.F. Ferreira Marques, A.P. de Lima, G. Lavareda, C. Nunes de Carvalho, A. Amaral, Zs. Kajcsos, Rad. Phys. Chemistry 76, 220 (2007)
  • 10. M. Marinov, N. Zotov, Phys. Rev. B 55, 2938 (1997)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n514kz
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