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2008 | 113 | 5 | 1273-1278
Article title

Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy

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Title variants
Languages of publication
EN
Abstracts
EN
Flash lamp annealing was applied to the modification of thin amorphous Si layers on SiO_2 and glass. Slow positron implantation spectroscopy was used for the characterisation of the microstructure before and after flash lamp annealing. Changes in the structure down to a depth of some micrometres below the surface observed with slow positron implantation spectroscopy will be presented and discussed.
Keywords
Year
Volume
113
Issue
5
Pages
1273-1278
Physical description
Dates
published
2008-05
received
2007-09-03
References
  • 1. W. Shockley, H.J. Queisser, J. Appl. Phys. 32, 510 (1961)
  • 2. http://www.fzd.de/db, search for flash lamp annealing
  • 3. W. Anwand, H.-R. Kissener, G. Brauer, Acta Phys. Pol. A 88, 7 (1995)
  • 4. A. van Veen, H. Schut, J. deVries, R.A. Hakvoort, M.R. Ijpma, in: Positron Beams for Solids and Surfaces, Eds. P.J. Schultz, G.R. Massoumi, P.J. Simpson, AIP Conf. Proc., Vol. 218, American Institute of Physics, New York 1990, p. 171
  • 5. W. Anwand, G. Brauer, M. Hasegawa, O. Dersch, F. Rauch, Acta Phys Pol. A 99, 321 (2001)
  • 6. R. Kögler, W. Anwand, G. Brauer, A. Peeva, W. Skorupa, P. Werner, U. Gösele, Appl. Phys. Lett. 75, 1279 (1999)
  • 7. G. Brauer, F. Becvar, W. Anwand, W. Skorupa, Appl. Surf. Sci. 252, 3368 (2006)
  • 8. R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors - Defect Studies, 1st ed., Springer-Verlag, Berlin 1999, p. 148
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n501kz
Identifiers
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