Structural Changes in Flash Lamp Annealed Amorphous Si Layers Probed by Slow Positron Implantation Spectroscopy

• Authors: W. Anwand , Th. Schumann , G. Brauer , W. Skorupa , S. Xiong , C. Wu , T. Gebel
• Languages of publication: EN

Abstracts

EN

Flash lamp annealing was applied to the modification of thin amorphous Si layers on SiO_2 and glass. Slow positron implantation spectroscopy was used for the characterisation of the microstructure before and after flash lamp annealing. Changes in the structure down to a depth of some micrometres below the surface observed with slow positron implantation spectroscopy will be presented and discussed.

Keywords

EN

61.80.Ba; 78.70.Bj; 81.05.Ea; 81.07.Bc

Discipline

• 78.70.Bj: Positron annihilation(for positron states, see 71.60.+z in electronic structure of bulk materials; for positronium chemistry, see 82.30.Gg in physical chemistry and chemical physics)
• 61.80.Ba: Ultraviolet, visible, and infrared radiation effects (including laser radiation)
• 81.07.Bc: Nanocrystalline materials
• 81.05.Ea: III-V semiconductors

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 5
• Pages: 1273-1278

Dates

published

2008-05

received

2007-09-03

Contributors

author

W. Anwand

• Forschungszentrum Dresden-Rossendorf, PF 510 119, 01314 Dresden, Germany

author

Th. Schumann

• Forschungszentrum Dresden-Rossendorf, PF 510 119, 01314 Dresden, Germany

author

G. Brauer

• Forschungszentrum Dresden-Rossendorf, PF 510 119, 01314 Dresden, Germany

author

W. Skorupa

• Forschungszentrum Dresden-Rossendorf, PF 510 119, 01314 Dresden, Germany

author

S. Xiong

• Institute of Photoelectronics, Nankai University, Tianjin 300071, China

author

C. Wu

• Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, China

author

T. Gebel

• FHR Anlagenbau GmbH, 01458 Ottendorf-Okrilla, Germany

References

• 1. W. Shockley, H.J. Queisser, J. Appl. Phys. 32, 510 (1961)
• 2. http://www.fzd.de/db, search for flash lamp annealing
• 3. W. Anwand, H.-R. Kissener, G. Brauer, Acta Phys. Pol. A 88, 7 (1995)
• 4. A. van Veen, H. Schut, J. deVries, R.A. Hakvoort, M.R. Ijpma, in: Positron Beams for Solids and Surfaces, Eds. P.J. Schultz, G.R. Massoumi, P.J. Simpson, AIP Conf. Proc., Vol. 218, American Institute of Physics, New York 1990, p. 171
• 5. W. Anwand, G. Brauer, M. Hasegawa, O. Dersch, F. Rauch, Acta Phys Pol. A 99, 321 (2001)
• 6. R. Kögler, W. Anwand, G. Brauer, A. Peeva, W. Skorupa, P. Werner, U. Gösele, Appl. Phys. Lett. 75, 1279 (1999)
• 7. G. Brauer, F. Becvar, W. Anwand, W. Skorupa, Appl. Surf. Sci. 252, 3368 (2006)
• 8. R. Krause-Rehberg, H.S. Leipner, Positron Annihilation in Semiconductors - Defect Studies, 1st ed., Springer-Verlag, Berlin 1999, p. 148

Identifiers

DOI

10.12693/APhysPolA.113.1273