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2008 | 113 | 4 | 1255-1265
Article title

Properties of Neutron Doped Multicrystalline Silicon for Solar Cells

Content
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EN
Abstracts
EN
The technology of neutron transmutation doping of silicon wafers in MARIA nuclear research reactor is described. The studies of the radiation defects performed with positron annihilation confirmed that divacancies dominate in the irradiated material. Thermal treatment of irradiated silicon at 700-1000°C produces void-phosphorus complexes and void aggregates. The resistivity of the samples produced by neutron transmutation doping was found to be uniform within 2.5% limits. The severe reduction of the minority carrier lifetime in irradiated samples was confirmed.
Keywords
Year
Volume
113
Issue
4
Pages
1255-1265
Physical description
Dates
published
2008-04
received
2007-06-03
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n417kz
Identifiers
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