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2008 | 113 | 3 | 1085-1090
Article title

Formation of Porous n-A_3B_5 Compounds

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EN
Abstracts
EN
Porous layers of A_3B_5 compounds were formed on n-type wafers by electrochemical anodic etching. The morphology of nanostructured layers was studied by scanning electron microscopy and atomic force microscopy techniques. The optimal conditions of the formation of porous layers were determined by varying the composition of etching solution, current density and etching time. Large area (1.5×1.5 cm^2) porous layers of uniform porosity were produced by anodization process of n-type A_3B_5 semiconductors,
Keywords
EN
Contributors
author
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
  • Vilnius Gediminas Technical University, Saulėtekio 11, Vilnius, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n368kz
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