Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

• Authors: D. Šalucha , I. Šimkiene , J. Sabataityte
• Languages of publication: EN

Abstracts

EN

Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.

Keywords

EN

85.30.Kk; 85.40.Ls; 81.05.Rm

Discipline

• 85.30.Kk: Junction diodes
• 85.40.Ls: Metallization, contacts, interconnects; device isolation
• 81.05.Rm: Porous materials; granular materials(for granular superconductors, see 74.81.Bd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1079-1083

Dates

published

2008-03

received

2007-08-26

Contributors

author

D. Šalucha

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

author

I. Šimkiene

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

author

J. Sabataityte

• Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.113.1079