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2008 | 113 | 3 | 1079-1083
Article title

Formation of Nanostructured Layers for Passivation of High Power Silicon Devices

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EN
Abstracts
EN
Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.
Keywords
EN
Contributors
author
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
  • Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n367kz
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