Journal
Article title
Authors
Title variants
Languages of publication
Abstracts
Nanocrystalline porous silicon films, which have been formed by using simple wet electrochemical etching process in HF electrolyte, were applied for passivation of high power silicon diodes. An optimal technology was designed to manufacture a uniform layer of porous silicon over the area of the p-n junction. The 8% increase in the yield was achieved onO100 mm diameter wafers with 69 cells of diodes in each, by using a very simple technology for the formation of porous layer for passivation of high power silicon diodes.
Discipline
Journal
Year
Volume
Issue
Pages
1079-1083
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
- Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, Vilnius, Lithuania
References
- 1. S.M. Sze, VLSI Technology, Mc Graw-Hill Book Comp., New York 1983
- 2. M. Lee, Y. Wang, C. Chu, Sol. Eng. Mat. Sol. Cells 59, 59 (1999)
- 3. M.L. Tarng, J.I. Pankove, IEEE Trans. Electron Dev. ED-26, 1728 (1979)
- 4. J. Wong-Leung, C.E. Ascheron, M. Petravic, R.G. Elliman, J.S. Williams, Appl. Phys. Lett. 66, 1231 (1995)
- 5. www.virginiasemi.com
- 6. E. Gaubas, K. Grigoras, I.Šimkien, Lith. Phys. J. 37, 544 (1997)
- 7. B. Jaballah, H. Ezzaouia, Semicond. Sci. Technol. 22, 399 (2007)
- 8. J. Sabataitytė, A. Rėza, I. Šimkienė, A. Matulis, G.J. Babonas, Solid State Phenom. 97-98, 145 (2004)
- 9. H. Föll, M. Christophersen, J. Carstensen, G. Hasse, Mater. Sci. Eng. R. Reports 39, 93 (2002)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n367kz