Valence States of Metal Ions in La_{0.7}Ce_{0.3}MnO_3 Thin Films

• Authors: S. Mickevičius , V. Bondarenka , S. Grebinskij , A. Oginskis , R. Butkutė , H. Tvardauskas , B. Vengalis , B. Orlowski , V. Osinniy , M. Pietrzyk , W. Drube
• Languages of publication: EN

Abstracts

EN

We report valence states of ions in La_{0.7}Ce_{0.3}MnO_3 thin films grown by a reactive dc magnetron sputtering. The measurements were performed by means of high-energy X-ray photoelectron spectroscopy using synchrotron radiation. It was found that Ce ion in the compound is either in tetravalent or trivalent chemical state, manganese is in divalent, trivalent and tetravalent states, while La ion existing in oxide and hydroxide chemical species is in trivalent state.

Keywords

EN

79.60.-i; 71.20.Nr; 71.20.Eh

Discipline

• 71.20.Eh: Rare earth metals and alloys
• 79.60.-i: Photoemission and photoelectron spectra(for photoelectron spectroscopy, see 87.64.ks in biological physics; 82.80.Pv in chemical analysis)
• 71.20.Nr: Semiconductor compounds

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1071-1074

Dates

published

2008-03

received

2007-08-26

Contributors

author

S. Mickevičius

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

V. Bondarenka

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

S. Grebinskij

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

A. Oginskis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

R. Butkutė

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

H. Tvardauskas

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

B. Vengalis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

B. Orlowski

• Institute of Physics, Polish Academy of Science, al. Lotników 32/46, 02-668 Warsaw, Poland

author

V. Osinniy

• Institute of Physics, Polish Academy of Science, al. Lotników 32/46, 02-668 Warsaw, Poland

author

M. Pietrzyk

• Institute of Physics, Polish Academy of Science, al. Lotników 32/46, 02-668 Warsaw, Poland

author

W. Drube

• HASYLAB at Deutsches Elektronen-Synchrotron DESY, Notkestr. 85, D-22603 Hamburg, Germany

References

• 1. R. Butkutė, J. Devenson, M.A. Rosa, M. Godinho, A.K. Oginskis, F. Anisimovas, A. Vailionis, B. Vengalis, Thin Solid Films 515, 599 (2006)
• 2. J.R. Sun, C.F. Yeung, K. Zhao, L.Z. Zhou, C.H. Leung, H.K. Wong, B.G. Shen, Appl. Phys. Lett. 76, 1164 (2000)
• 3. D.J. Wang, C.M. Xiong, G.J. Liu, Y.W. Xie, B.G. Shen, J.R. Sun, Physica B 371, 187 (2006)
• 4. S. Mickevičius, S. Grebinskij, V. Bondarenka, B. Vengalis, K. Sliužienė, B.A. Orlowski, V. Osinniy, W. Drube, J. All. Comp. 107-111, 107 (2006)

Identifiers

DOI

10.12693/APhysPolA.113.1071