Study of p-Fe₃O₄/n-(GaAs,Si) Heterostructures: Fabrication and Physical Properties

• Authors: V. Lisauskas , R. Butkutė , B. Vengalis , K. Šliužienė , S. Tamulevicius , M. Andrulevicius
• Languages of publication: EN

Abstracts

EN

We report preparation and investigation of p -n heterostructures based on Fe₃O₄ thin films grown on semiconductor Si and GaAs substrates. Fe₃O₄ films with thickness ranging from 60 to 300 nm were grown at 350÷450°C using dc magnetron sputtering technique. The measurement of X-ray diffraction and reflection high energy electron diffraction revealed polycrystalline microstructure of thin Fe₃O₄ films deposited on both Si and GaAs substrate. Investigation of surface composition by X-ray photoelectron spectroscopy showed that Fe 2p peak consists of three main peaks, namely, metallic iron Fe(0), Fe(II), and Fe(III). Transport measurements of Fe₃O₄/n-(Si, GaAs) heterostructures demonstrated nonlinear current-voltage (I -V) dependences in the temperature range from 300 K to 78 K.

Keywords

EN

73.40.-c; 73.40.Gk; 81.15.Cd

Discipline

• 73.40.-c: Electronic transport in interface structures
• 73.40.Gk: Tunneling(for tunneling in quantum Hall effects, see 73.43.Jn)
• 81.15.Cd: Deposition by sputtering

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1055-1058

Dates

published

2008-03

received

2007-08-26

Contributors

author

V. Lisauskas

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

R. Butkutė

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

B. Vengalis

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

K. Šliužienė

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
• Institute of Physical Electronics of Kaunas University of Technology, Savanoriu 271, Kaunas, Lithuania

author

S. Tamulevicius

• Institute of Physical Electronics of Kaunas University of Technology, Savanoriu 271, Kaunas, Lithuania

author

M. Andrulevicius

• Institute of Physical Electronics of Kaunas University of Technology, Savanoriu 271, Kaunas, Lithuania

References

• 1. D.C. Kundaliya, S.B. Ogale, L.F. Fu, S.J. Welz, J.S. Higgins, G. Langham, S. Dhar, N.D. Browning, T. Venkatesan, J. Appl. Phys. 99, 08K304 (2006)
• 2. M. Ziese, U. Köhler, A. Bollero, R. Höhne, P. Esquinazi, Phys. Rev. B 71, 180406(R) (2005)

Identifiers

DOI

10.12693/APhysPolA.113.1055