Electrical Properties and Magnetoresistance of Nanogranular SnO_2 Films

• Authors: V. Ksenevich , T. Dovzhenko , V. Dorosinets , I. Bashmakov , A. Melnikov , A. Wieck
• Languages of publication: EN

Abstracts

EN

Magnetotransport properties of the nanogranular SnO_2 films were invesigated. Non-linear current-voltage (I-V) characteristics were observed at low temperatures. The temperature dependence of the resistance and non-ohmic I-V curves can be well approximated by fluctuation-induced tunnelling model, indicating importance of the contacts barriers between SnO_2 grains. Magnetoresistance was measured within temperature range 2-15.3 K and could be consistent with the variable-range hopping conduction mechanism due to existence of localized states on the surface of SnO_2 grains.

Keywords

EN

73.43.Qt; 73.50.Fq

Discipline

• 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)
• 73.50.Fq: High-field and nonlinear effects

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1043-1046

Dates

published

2008-03

received

2007-08-26

Contributors

author

V. Ksenevich

• Department of Physics, Belarus State University, Nezalezhnasti av.4, 220030 Minsk, Belarus

author

T. Dovzhenko

• Department of Physics, Belarus State University, Nezalezhnasti av.4, 220030 Minsk, Belarus

author

V. Dorosinets

• Department of Physics, Belarus State University, Nezalezhnasti av.4, 220030 Minsk, Belarus

author

I. Bashmakov

• Department of Chemistry, Belarus State University, Leningradskayja str. 14, 220030 Minsk, Belarus

author

A. Melnikov

• Department of Physics and Astronomy, Bochum Ruhr-University, Universitaetstr., 150, 44780 Bochum, Germany

author

A. Wieck

• Department of Physics and Astronomy, Bochum Ruhr-University, Universitaetstr., 150, 44780 Bochum, Germany

References

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Identifiers

DOI

10.12693/APhysPolA.113.1043