Full-text resources of PSJD and other databases are now available in the new Library of Science.
Visit https://bibliotekanauki.pl

PL EN


Preferences help
enabled [disable] Abstract
Number of results
2008 | 113 | 3 | 1039-1042

Article title

Charge Carrier Transport Properties in Single-Walled Carbon Nanotube Fibers

Content

Title variants

Languages of publication

EN

Abstracts

EN
Transport properties via temperature dependences of sample resistance R(T) and influence of microwave field of 10 GHz on the conductivity of the single-walled carbon nanotubes fibers are investigated. The R(T) dependences studied within 4.2-300 K can be well approximated by the Mott law for 3D variable range hopping below T=80 K and by typical law for fluctuation-induced tunnelling model within the temperature range 80-300 K. We associate the observed increase in the conductivity with microwave power by increase in hopping probability of the charge carriers between single-walled carbon nanotubes.

Keywords

EN

Year

Volume

113

Issue

3

Pages

1039-1042

Physical description

Dates

published
2008-03
received
2007-08-26

Contributors

author
  • Department of Physics, Belarus State University, Nezalezhnasti av. 4, 220030 Minsk, Belarus
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Laboratoire de Physique de la Matière Condensée, S.N.C.M.P.-I.N.S.A., 135, Av. de Rangueil, 31077 Toulouse CEDEX 4, France
author
  • The Nano Tech Institute, University of Texas at Dallas, P.O. Box 830688, BE26, Richardson, TX 75083-0688, USA
author
  • Department of Materials Science, State University of New York at Stony Brook, N.Y. 11794-2275, USA

References

  • 1. M. Bockrath, D.H. Cobden, P.L. McEuen, N.G. Chopra, A. Zettl, A. Thess, R.E. Smalley, Science 275, 1922 (1997)
  • 2. M. Bockrath, D.H. Cobden, J. Lu, A.G. Rinzler, R.E. Smalley, L. Balents, P.L. McEuen, Nature 397, 598 (1999)
  • 3. A. Javey, J. Lu, A.G. Rinzler, R.E. Smalley, L. Balents, P.L. McEuen, Nature 424, 654 (2003)
  • 4. M.E. Kozlov, R.C. Capps, W.M. Sampson, V.H. Ebron, J.P. Ferraris, R.H. Baughman, Adv. Materials 17, 614 (2005)
  • 5. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984
  • 6. P. Sheng, Phys. Rev. B 21, 2180 (1980)
  • 7. G.T. Kim, S.H. Jhang, J.G. Park, S. Roth, Synth. Metals 117, 123 (2001)

Document Type

Publication order reference

Identifiers

YADDA identifier

bwmeta1.element.bwnjournal-article-appv113n357kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.