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2008 | 113 | 3 | 1039-1042
Article title

Charge Carrier Transport Properties in Single-Walled Carbon Nanotube Fibers

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EN
Abstracts
EN
Transport properties via temperature dependences of sample resistance R(T) and influence of microwave field of 10 GHz on the conductivity of the single-walled carbon nanotubes fibers are investigated. The R(T) dependences studied within 4.2-300 K can be well approximated by the Mott law for 3D variable range hopping below T=80 K and by typical law for fluctuation-induced tunnelling model within the temperature range 80-300 K. We associate the observed increase in the conductivity with microwave power by increase in hopping probability of the charge carriers between single-walled carbon nanotubes.
Keywords
EN
Publisher

Year
Volume
113
Issue
3
Pages
1039-1042
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
  • Department of Physics, Belarus State University, Nezalezhnasti av. 4, 220030 Minsk, Belarus
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Laboratoire de Physique de la Matière Condensée, S.N.C.M.P.-I.N.S.A., 135, Av. de Rangueil, 31077 Toulouse CEDEX 4, France
author
  • The Nano Tech Institute, University of Texas at Dallas, P.O. Box 830688, BE26, Richardson, TX 75083-0688, USA
author
  • Department of Materials Science, State University of New York at Stony Brook, N.Y. 11794-2275, USA
References
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  • 2. M. Bockrath, D.H. Cobden, J. Lu, A.G. Rinzler, R.E. Smalley, L. Balents, P.L. McEuen, Nature 397, 598 (1999)
  • 3. A. Javey, J. Lu, A.G. Rinzler, R.E. Smalley, L. Balents, P.L. McEuen, Nature 424, 654 (2003)
  • 4. M.E. Kozlov, R.C. Capps, W.M. Sampson, V.H. Ebron, J.P. Ferraris, R.H. Baughman, Adv. Materials 17, 614 (2005)
  • 5. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984
  • 6. P. Sheng, Phys. Rev. B 21, 2180 (1980)
  • 7. G.T. Kim, S.H. Jhang, J.G. Park, S. Roth, Synth. Metals 117, 123 (2001)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n357kz
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