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Abstracts
Transport properties via temperature dependences of sample resistance R(T) and influence of microwave field of 10 GHz on the conductivity of the single-walled carbon nanotubes fibers are investigated. The R(T) dependences studied within 4.2-300 K can be well approximated by the Mott law for 3D variable range hopping below T=80 K and by typical law for fluctuation-induced tunnelling model within the temperature range 80-300 K. We associate the observed increase in the conductivity with microwave power by increase in hopping probability of the charge carriers between single-walled carbon nanotubes.
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Pages
1039-1042
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
- Department of Physics, Belarus State University, Nezalezhnasti av. 4, 220030 Minsk, Belarus
author
- Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Laboratoire de Physique de la Matière Condensée, S.N.C.M.P.-I.N.S.A., 135, Av. de Rangueil, 31077 Toulouse CEDEX 4, France
author
- The Nano Tech Institute, University of Texas at Dallas, P.O. Box 830688, BE26, Richardson, TX 75083-0688, USA
author
- Department of Materials Science, State University of New York at Stony Brook, N.Y. 11794-2275, USA
References
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- 5. B.I. Shklovskii, A.L. Efros, Electronic Properties of Doped Semiconductors, Springer-Verlag, Berlin 1984
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n357kz