SiO_x Nanowires Produced on Molybdenum-Coated Si Substrates

• Authors: H. Kim , J. Lee , J. Yang
• Languages of publication: EN

Abstracts

EN

We synthesized SiO_x nanowires with diameters of 30-140 nm, for the first time by the simple heating of the Mo-coated Si substrates. X-ray diffraction, selected area electron diffraction, and energy-dispersive X-ray spectroscopy indicated that the nanowires were in an amorphous state, comprising Si and O only. Fitting the photoluminescence spectrum with Gaussian functions revealed that the nanowires exhibited significant photoluminescence intensities near blue and green light regions. We extensively discussed the possible growth mechanism of SiO_x nanowires.

Keywords

EN

81.07.-b; 78.55.-m

Discipline

• 81.07.-b: Nanoscale materials and structures: fabrication and characterization(for structure of nanoscale materials, see 61.46.-w; for nanostructured materials in electrochemistry, see 82.45.Yz; see also 62.23.-c Structural classes of nanoscale systems in mechanical properties of condensed matter)
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1017-1020

Dates

published

2008-03

received

2007-08-26

Contributors

author

H. Kim

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

J. Lee

• Division of Materials Science and Engineering, Inha University, Incheon 402-751, Republic of Korea

author

J. Yang

• Advanced Materials R&D Center, Korea Institute of Industrial Technology, Republic of Korea

References

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Identifiers

DOI

10.12693/APhysPolA.113.1017