Influence of Irradiation by High-Energy Protons on GaN Detectors

• Authors: V. Kažukauskas , V. Kalendra , J. Vaitkus , R. Jasiulionis
• Languages of publication: EN

Abstracts

EN

We had investigated effects of the irradiation by 24 GeV protons with doses ranging from 1×10^{14} up to 1×10^{16} p/cm^2 on the properties of GaN ionising radiation detectors. In theγ-spectra of the samples radiation of ^7Be, ^{22}Na, and other long-lived radionuclides with A <70 was identified. Their activities were proportional to the irradiation dozes. Device contact properties were analysed by current-voltage I-V dependences. Created defects were revealed by the thermally stimulated defect spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12-0.16 eV, 0.18-0.22 eV, 0.35-0.42 eV, and 0.84-0.94 eV. Meanwhile, in the detectors irradiated with the highest doses only current growth with the activation energy of about 0.8-1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material.

Keywords

EN

72.20.Jv; 72.20.Fr; 72.80.Ey; 78.70.-g; 85.30.De

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 72.80.Ey: III-V and II-VI semiconductors
• 72.20.Fr: Low-field transport and mobility; piezoresistance
• 78.70.-g: Interactions of particles and radiation with matter
• 72.20.Jv: Charge carriers: generation, recombination, lifetime, and trapping

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 1013-1016

Dates

published

2008-03

received

2007-08-26

Contributors

author

V. Kažukauskas

• Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania

author

V. Kalendra

• Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania

author

J. Vaitkus

• Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania

author

R. Jasiulionis

• Institute of Physics, Savanori 231, LT-02300 Vilnius, Lithuania

References

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• 4. V. Kažukauskas, R. Jasiulionis, V. Kalendra, J.-V. Vaitkus, Diam. Relat. Mater. 16, 1058 (2007)
• 5. G. Kavaliauskienė, V. Kažukauskas, V. Rinkevičius, J. Storasta, J.V. Vaitkus, R. Bates, V. O'Shea, K.M. Smith, Appl. Phys. A 69, 415 (1999)

Identifiers

DOI

10.12693/APhysPolA.113.1013