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2008 | 113 | 3 | 1013-1016
Article title

Influence of Irradiation by High-Energy Protons on GaN Detectors

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EN
Abstracts
EN
We had investigated effects of the irradiation by 24 GeV protons with doses ranging from 1×10^{14} up to 1×10^{16} p/cm^2 on the properties of GaN ionising radiation detectors. In theγ-spectra of the samples radiation of ^7Be, ^{22}Na, and other long-lived radionuclides with A <70 was identified. Their activities were proportional to the irradiation dozes. Device contact properties were analysed by current-voltage I-V dependences. Created defects were revealed by the thermally stimulated defect spectroscopy. In the less irradiated samples the following values of the effective thermal activation energies were found: 0.12-0.16 eV, 0.18-0.22 eV, 0.35-0.42 eV, and 0.84-0.94 eV. Meanwhile, in the detectors irradiated with the highest doses only current growth with the activation energy of about 0.8-1.0 eV could be identified. Effects of percolation transport in disordered media were proved in the irradiated material.
Keywords
Contributors
  • Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania
author
  • Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania
author
  • Semiconductor Physics Department, and Institute of Materials Science and Applied Research, Saulėtekio al. 9, bldg. 3, LT- 10222 Vilnius, Lithuania
  • Institute of Physics, Savanori 231, LT-02300 Vilnius, Lithuania
References
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  • 4. V. Kažukauskas, R. Jasiulionis, V. Kalendra, J.-V. Vaitkus, Diam. Relat. Mater. 16, 1058 (2007)
  • 5. G. Kavaliauskienė, V. Kažukauskas, V. Rinkevičius, J. Storasta, J.V. Vaitkus, R. Bates, V. O'Shea, K.M. Smith, Appl. Phys. A 69, 415 (1999)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n351kz
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