Growth and Investigation of p-La_{2/3}Ca_{1/3}MnO_3/n-Si Heterostructures

• Authors: F. Anisimovas , R. Butkutė , J. Devenson , A. Maneikis , V. Stankevič , V. Pyragas , B. Vengalis
• Languages of publication: EN

Abstracts

EN

We report the fabrication and investigation of p-n diode structures based on thin hole-doped La_{2/3}Ca_{1/3}MnO_3 films grown on n-type silicon substrates. La_{2/3}Ca_{1/3}MnO_3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La_{2/3}Ca_{1/3}MnO_3 thin films on Si substrates. The surface roughness of La_{2/3}Ca_{1/3}MnO_3 films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that La_{2/3}Ca_{1/3}MnO_3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.

Keywords

EN

71.30.+h; 73.43.Qt; 75.47.Lx; 81.15.Fg

Discipline

• 71.30.+h: Metal-insulator transitions and other electronic transitions
• 75.47.Lx: Magnetic oxides
• 81.15.Fg: Pulsed laser ablation deposition
• 73.43.Qt: Magnetoresistance(see also 75.47.-m Magnetotransport phenomena; materials for magnetotransport in magnetic properties and materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 997-1000

Dates

published

2008-03

received

2007-08-26

Contributors

author

F. Anisimovas

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

R. Butkutė

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

J. Devenson

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Maneikis

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

V. Stankevič

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

V. Pyragas

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

author

B. Vengalis

• Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania

References

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• 3. P.L. Lang, Y.G. Zhao, B. Yang, X.L. Zhang, J. Li, P. Wang, D.N. Zheng, Appl. Phys. Lett. 87, 053502 (2005)
• 4. Y. Lin, B.R. Zhao, H.B. Peng, B. Xu, H. Chen, F. Wu, H.J. Tao, Z.X. Zhao, J.S. Chen, Appl. Phys. Lett. 73, 2781 (1998)

Identifiers

DOI

10.12693/APhysPolA.113.997