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Number of results
2008 | 113 | 3 | 997-1000
Article title

Growth and Investigation of p-La_{2/3}Ca_{1/3}MnO_3/n-Si Heterostructures

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Languages of publication
EN
Abstracts
EN
We report the fabrication and investigation of p-n diode structures based on thin hole-doped La_{2/3}Ca_{1/3}MnO_3 films grown on n-type silicon substrates. La_{2/3}Ca_{1/3}MnO_3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La_{2/3}Ca_{1/3}MnO_3 thin films on Si substrates. The surface roughness of La_{2/3}Ca_{1/3}MnO_3 films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that La_{2/3}Ca_{1/3}MnO_3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
Keywords
Year
Volume
113
Issue
3
Pages
997-1000
Physical description
Dates
published
2008-03
received
2007-08-26
References
  • 1. M. Bowen, M. Bibes, A. Barthelemy, J.P. Contour, A. Anane, Y. Lemaire, A. Fert, Appl. Phys. Lett. 82, 233 (2003)
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  • 3. P.L. Lang, Y.G. Zhao, B. Yang, X.L. Zhang, J. Li, P. Wang, D.N. Zheng, Appl. Phys. Lett. 87, 053502 (2005)
  • 4. Y. Lin, B.R. Zhao, H.B. Peng, B. Xu, H. Chen, F. Wu, H.J. Tao, Z.X. Zhao, J.S. Chen, Appl. Phys. Lett. 73, 2781 (1998)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n347kz
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