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Abstracts
We report the fabrication and investigation of p-n diode structures based on thin hole-doped La_{2/3}Ca_{1/3}MnO_3 films grown on n-type silicon substrates. La_{2/3}Ca_{1/3}MnO_3 films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of La_{2/3}Ca_{1/3}MnO_3 thin films on Si substrates. The surface roughness of La_{2/3}Ca_{1/3}MnO_3 films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that La_{2/3}Ca_{1/3}MnO_3/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
Discipline
Journal
Year
Volume
Issue
Pages
997-1000
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
- Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
References
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- 2. M. Sugiura, K. Uragou, M. Noda, M. Tachiki, T. Kobayashi, Jpn. J. Appl. Phys. 38, 2675 (1999)
- 3. P.L. Lang, Y.G. Zhao, B. Yang, X.L. Zhang, J. Li, P. Wang, D.N. Zheng, Appl. Phys. Lett. 87, 053502 (2005)
- 4. Y. Lin, B.R. Zhao, H.B. Peng, B. Xu, H. Chen, F. Wu, H.J. Tao, Z.X. Zhao, J.S. Chen, Appl. Phys. Lett. 73, 2781 (1998)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n347kz