Charge Carrier Heating Effect in Porous Silicon Structures Investigated by Microwaves

• Authors: J. Gradauskas , E. Šatkovskis , A. Česnys , J. Stupakova , A. Sužiedėlis
• Languages of publication: EN

Abstracts

EN

Diode-like samples, containing porous silicon structures, were investigated by microwave radiation pulses. The resistance of the samples and electromotive force arising over the samples placed in a section of waveguide was measured. Reduction of resistance of the samples was observed with increase in microwave power. More complicated shape of the electromotive force dependence on pulse power was found. It is shown that both effects could be explained by models based on a concept of carrier heating by microwave radiation.

Keywords

EN

61.43.Gt; 78.70.Gq; 72.30.+q

Discipline

• 78.70.Gq: Microwave and radio-frequency interactions
• 61.43.Gt: Powders, porous materials
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 993-996

Dates

published

2008-03

received

2007-08-26

Contributors

author

J. Gradauskas

• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania
• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

E. Šatkovskis

• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

A. Česnys

• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

J. Stupakova

• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

A. Sužiedėlis

• Vilnius Gediminas Technical University, Saulėtekio 11, LT-10223 Vilnius, Lithuania

References

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• 2. V. Lehmann, Electrochemistry of Silicon, Wiley- VCH Verlag Gmb Weinheim 2002, p. 277
• 3. I.K. Itotia, R.F. Drayton, in: Proc. IEEE MTT-S Int. Microwave Symp. Digest, Ed. R. Hamilton, Co-ed N. Chiang, CD-ROM, Ed. A. Taylor, IEEE Cat. No. 02CH37278, Vol. 2, Seattle (WA0 USA), 2002, p. 681
• 4. S.P. Zhimin, Techn. Phys. Lett. 20, 55 (1994) (in Russian)
• 5. S. Ašmontas, J. Gradauskas, V. Zagadsky, J. Stupakova, A. Sužiedėlis, E.Šatkovskis, Tech. Phys. Lett. 32, 603 (2006)
• 6. E. Shatkovskis, J. Gradauskas, J. Stupakova, A.Česnys, A. Sužiedėlis, Lithuanian Journ. Phys. 47, 169 (2007)
• 7. M. Ben-Chorin, F. Moeller, F. Koch, J. Appl. Phys. 77, 4482 (1995)

Identifiers

DOI

10.12693/APhysPolA.113.993