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2008 | 113 | 3 | 993-996
Article title

Charge Carrier Heating Effect in Porous Silicon Structures Investigated by Microwaves

Content
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Languages of publication
EN
Abstracts
EN
Diode-like samples, containing porous silicon structures, were investigated by microwave radiation pulses. The resistance of the samples and electromotive force arising over the samples placed in a section of waveguide was measured. Reduction of resistance of the samples was observed with increase in microwave power. More complicated shape of the electromotive force dependence on pulse power was found. It is shown that both effects could be explained by models based on a concept of carrier heating by microwave radiation.
Keywords
EN
Year
Volume
113
Issue
3
Pages
993-996
Physical description
Dates
published
2008-03
received
2007-08-26
References
  • 1. V. Dienys, J. Pozela, Hot Electrons, Mintis, Vilnius 1971, p. 289, (in Russian)
  • 2. V. Lehmann, Electrochemistry of Silicon, Wiley- VCH Verlag Gmb Weinheim 2002, p. 277
  • 3. I.K. Itotia, R.F. Drayton, in: Proc. IEEE MTT-S Int. Microwave Symp. Digest, Ed. R. Hamilton, Co-ed N. Chiang, CD-ROM, Ed. A. Taylor, IEEE Cat. No. 02CH37278, Vol. 2, Seattle (WA0 USA), 2002, p. 681
  • 4. S.P. Zhimin, Techn. Phys. Lett. 20, 55 (1994) (in Russian)
  • 5. S. Ašmontas, J. Gradauskas, V. Zagadsky, J. Stupakova, A. Sužiedėlis, E.Šatkovskis, Tech. Phys. Lett. 32, 603 (2006)
  • 6. E. Shatkovskis, J. Gradauskas, J. Stupakova, A.Česnys, A. Sužiedėlis, Lithuanian Journ. Phys. 47, 169 (2007)
  • 7. M. Ben-Chorin, F. Moeller, F. Koch, J. Appl. Phys. 77, 4482 (1995)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n346kz
Identifiers
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