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2008 | 113 | 3 | 989-992
Article title

Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

Content
Title variants
Languages of publication
EN
Abstracts
EN
A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al_{0.2}Ga_{0.8}As/GaAs/Al_{0.2}Ga_{0.8}As high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs (v_{max}=10^7 cm/s) and achieved the value of 4×10^7 cm/s.
Keywords
EN
Year
Volume
113
Issue
3
Pages
989-992
Physical description
Dates
published
2008-03
received
2007-08-26
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n345kz
Identifiers
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