Enhanced Electron Saturated Drift Velocity in AlGaAs/GaAs/AlGaAs Heterostructures

• Authors: J. Požela , K. Požela , A. Sužiedėlis , V. Jucienė , V. Petkun
• Languages of publication: EN

Abstracts

EN

A new approach for reduction of scattering rate of electrons by polar optical phonons in the double barrier heterojunction quantum well is proposed. This approach is based on the phonon localization in narrow phonon wells. The enhancement of the electron saturated drift velocity in the Al_{0.2}Ga_{0.8}As/GaAs/Al_{0.2}Ga_{0.8}As high electron mobility transistor channel is envisaged theoretically and observed experimentally. The drift velocity in the channel in high electric fields (E >10 kV/cm) exceeded the maximal drift velocity in bulk GaAs (v_{max}=10^7 cm/s) and achieved the value of 4×10^7 cm/s.

Keywords

EN

72.10.Di; 73.21.Fg; 73.40.Kp

Discipline

• 73.21.Fg: Quantum wells
• 73.40.Kp: III-V semiconductor-to-semiconductor contacts,p-njunctions, and heterojunctions
• 72.10.Di: Scattering by phonons, magnons, and other nonlocalized excitations(see also 71.45.-d Collective effects in electronic structure of bulk materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 989-992

Dates

published

2008-03

received

2007-08-26

Contributors

author

J. Požela

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

K. Požela

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

A. Sužiedėlis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

V. Jucienė

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

V. Petkun

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

References

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Identifiers

DOI

10.12693/APhysPolA.113.989