External Noise Effects on the Electron Velocity Fluctuations in Semiconductors

• Authors: D. Persano Adorno , N. Pizzolato , B. Spagnolo
• Languages of publication: EN

Abstracts

EN

We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover, this random field can cause a suppression of the total noise power.

Keywords

EN

72.70.+m   05.40.Ca   05.40.-a  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 985-988

Dates

published

2008-03

received

2007-08-26

References

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Identifiers

DOI

10.12693/APhysPolA.113.985