External Noise Effects on the Electron Velocity Fluctuations in Semiconductors

• Authors: D. Persano Adorno , N. Pizzolato , B. Spagnolo
• Languages of publication: EN

Abstracts

EN

We investigate the modification of the intrinsic carrier noise spectral density induced in low-doped semiconductor materials by an external correlated noise source added to the driving high-frequency periodic electric field. A Monte Carlo approach is adopted to numerically solve the transport equation by considering all the possible scattering phenomena of the hot electrons in the medium. We show that the noise spectra are strongly affected by the intensity and the correlation time of the external random electric field. Moreover, this random field can cause a suppression of the total noise power.

Keywords

EN

72.70.+m; 05.40.Ca; 05.40.-a

Discipline

• 05.40.Ca: Noise
• 72.70.+m: Noise processes and phenomena
• 05.40.-a: Fluctuation phenomena, random processes, noise, and Brownian motion(for fluctuations in superconductivity, see 74.40.-n; for statistical theory and fluctuations in nuclear reactions, see 24.60.-k; for fluctuations in plasma, see 52.25.Gj; for nonlinear dynamics and chaos, see 05.45.-a)

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 985-988

Dates

published

2008-03

received

2007-08-26

Contributors

author

D. Persano Adorno

• Dipartimento di Fisica e Tecnologie Relative and CNISM, Italy

author

N. Pizzolato

• Dipartimento di Fisica e Tecnologie Relative and CNISM, Group of Interdisciplinary Physics, Viale delle Scienze, Ed. 18, 90128 Palermo, Italy

author

B. Spagnolo

• Dipartimento di Fisica e Tecnologie Relative and CNISM, Group of Interdisciplinary Physics, Viale delle Scienze, Ed. 18, 90128 Palermo, Italy

References

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Identifiers

DOI

10.12693/APhysPolA.113.985