Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

• Authors: A. Matulionis , J. Liberis , I. Matulionienė , M. Ramonas
• Languages of publication: EN

Abstracts

EN

The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.

Keywords

EN

72.20.Ht; 72.70.+m; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 967-970

Dates

published

2008-03

received

2007-08-26

Contributors

author

A. Matulionis

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania

author

J. Liberis

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania

author

I. Matulionienė

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania

author

M. Ramonas

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
• EIT4, Bundeswehr University, 85577 Neubiberg, Germany

References

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• 5. A. Matulionis, J. Liberis, L. Ardaravičius, L.F. Eastman, J.R. Shealy, A. Vertiatchikh, Semicond. Sci. Technol. 19, S421 (2004)
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• 8. J. Liberis, M. Ramonas, O. Kiprijanovič, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, D. Jena, Appl. Phys. Lett. 89, 202117 (2006)

Identifiers

DOI

10.12693/APhysPolA.113.967