Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

• Authors: A. Matulionis , J. Liberis , I. Matulionienė , M. Ramonas
• Languages of publication: EN

Abstracts

EN

The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.

Keywords

EN

72.20.Ht; 72.70.+m; 72.80.Ey

Discipline

• 72.80.Ey: III-V and II-VI semiconductors
• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 967-970

Dates

published

2008-03

received

2007-08-26

Contributors

author

A. Matulionis

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania

author

J. Liberis

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania

author

I. Matulionienė

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania

author

M. Ramonas

• Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
• EIT4, Bundeswehr University, 85577 Neubiberg, Germany

References

• 1. A. Matulionis, Phys. Status Solidi A 203, 2313 (2006)
• 2. M. Ramonas, A. Matulionis, L.F. Eastman, Semicond. Sci. Technol. 22, 875 (2007)
• 3. A. Matulionis, J. Liberis, I. Matulionienė, M. Ramonas, L.F. Eastman, J.R. Shealy, V. Tilak, A. Vertiatchikh, Phys. Rev. B 68, 035338 (2003)
• 4. Z. Wang, K. Reimann, M. Woerner, T. Elsaesser, D. Hofstetter, J. Hwang, W.J. Schaff, L.F. Eastman, Phys. Rev. Lett. 94, 037403 (2005)
• 5. A. Matulionis, J. Liberis, L. Ardaravičius, L.F. Eastman, J.R. Shealy, A. Vertiatchikh, Semicond. Sci. Technol. 19, S421 (2004)
• 6. K.T. Tsen, D.K. Ferry, A. Botchkarev, B. Sverdlov, A. Salvador, H. Morkoç, Appl. Phys. Lett. 72, 2132 (1998)
• 7. K.T. Tsen, J.G. Kiang, D.K. Ferry, H. Morkoç, Appl. Phys. Lett. 89, 112111 (2006)
• 8. J. Liberis, M. Ramonas, O. Kiprijanovič, A. Matulionis, N. Goel, J. Simon, K. Wang, H. Xing, D. Jena, Appl. Phys. Lett. 89, 202117 (2006)

Identifiers

DOI

10.12693/APhysPolA.113.967