Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

• Authors: A. Matulionis , J. Liberis , I. Matulionienė , M. Ramonas
• Languages of publication: EN

Abstracts

EN

The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.

Keywords

EN

72.20.Ht   72.70.+m   72.80.Ey  

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 967-970

Dates

published

2008-03

received

2007-08-26

References

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Identifiers

DOI

10.12693/APhysPolA.113.967