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Number of results
2008 | 113 | 3 | 967-970
Article title

Hot-Electron Transport Noise and Power Dissipation in GaN Channels at High Density of Electrons

Content
Title variants
Languages of publication
EN
Abstracts
EN
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
Keywords
EN
Year
Volume
113
Issue
3
Pages
967-970
Physical description
Dates
published
2008-03
received
2007-08-26
References
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Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n340kz
Identifiers
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