Journal
Article title
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Abstracts
The experimental results on transport, noise, and dissipation of electric power for voltage-biased Si-doped GaN channels are compared with those of Monte Carlo simulation. The measured dissipated power shows a stronger hot-phonon effect than the simulated one. On the other hand, the experimental results on the electron drift velocity at high electric fields show a weaker hot-phonon effect as compared with the simulated one. The misfit can be reduced if a conversion of the friction-active nonequilibrium longitudinal optical phonons into the friction-passive longitudinal optical phonons is considered.
Discipline
Journal
Year
Volume
Issue
Pages
967-970
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
- Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
author
- Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
author
- Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
author
- Fluctuation Research Laboratory, Semiconductor Physics Institute, A. Goštanto 11, Vilnius 01108, Lithuania
- EIT4, Bundeswehr University, 85577 Neubiberg, Germany
References
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Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n340kz