Radiative Recombination Spectra of Heavily p-Type δ-Doped GaAs/AlAs MQWs

• Authors: J. Kundrotas , A. Čerškus , G. Valušis , M. Lachab , S. Khanna , P. Harrison , E. Linfield
• Languages of publication: EN

Abstracts

EN

We present a study of the photoluminescence properties of heavily Be δ-doped GaAs/AlAs multiple quantum wells measured at room and liquid nitrogen temperatures. Possible mechanisms for photocarriers recombination are discussed, with a particular focus on the peculiarities of the excitonic and free carriers-acceptors photoluminescence emissions occurring below and above the Mott metal-insulator transition. Moreover, based on a simple theoretical model, it is found that the critical impurities concentration to observe the Mott transition in the multiple quantum wells samples exhibiting 15 nm wells width and 5 nm thick barrier layers is ≈3×10^{12} cm^{-2}.

Keywords

EN

78.55.-m; 78.67.De; 71.30.+h

Discipline

• 71.30.+h: Metal-insulator transitions and other electronic transitions
• 78.67.De: Quantum wells
• 78.55.-m: Photoluminescence, properties and materials(for time resolved luminescence, see 78.47.jd)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 963-966

Dates

published

2008-03

received

2007-08-26

Contributors

author

J. Kundrotas

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
• Gediminas' Technical University of Vilnius, Saulėtekio 11, LT-10223 Vilnius, Lithuania

author

A. Čerškus

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

G. Valušis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

M. Lachab

• Institute of Microwave and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom

author

S. Khanna

• Institute of Microwave and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom

author

P. Harrison

• Institute of Microwave and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom

author

E. Linfield

• Institute of Microwave and Photonics, University of Leeds, Leeds LS2 9JT, United Kingdom

References

• 1. Delta-doping of Semiconductors, Ed. E.F. Schubert, Cambridge University Press, New York 1996
• 2. J.J. Harris, R. Murray, C.T. Foxon, Semicond. Sci. Technol. 8, 31 (1993)
• 3. A. John Peter, K. Navaneethakrishnan, Physica E 16, 223 (2003)
• 4. J. Kundrotas, A.Čerškus, S. Ašmontas, A. Johannessen, G. Valušis, B. Sherliker, M.P. Halsall, P. Harrison, M.J. Steer, Lithuanian J. Phys. 45, 201 (2005)
• 5. N.F. Mott, Metal-insulator Transitions, Taylor & Francis Ltd, London 1974
• 6. J. Kundrotas, A.Čerškus, S. Ašmontas, G. Valuis, B. Sherliker, M.P. Halsall, M.J. Steer, E. Johannessen, P. Harrison, Phys. Rev. B 72, 235322 (2005)
• 7. J. Kortus, J. Monecke, Phys. Rev. B 49, 17216 (1994)

Identifiers

DOI

10.12693/APhysPolA.113.963