Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique

• Authors: V. Gružinskis , P. Shiktorov , E. Starikov
• Languages of publication: EN

Abstracts

EN

Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of 10^{15} cm^{-3} is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.

Keywords

EN

72.20.Ht; 72.30.+q; 72.70.+m

Discipline

• 72.70.+m: Noise processes and phenomena
• 72.20.Ht: High-field and nonlinear effects
• 72.30.+q: High-frequency effects; plasma effects

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 943-946

Dates

published

2008-03

received

2007-08-26

Contributors

author

V. Gružinskis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

P. Shiktorov

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

author

E. Starikov

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

References

• 1. V. Gružinskis, P. Shiktorov, E. Starikov, L. Reggiani, L. Varani, J.C. Vaissiere, Semicond. Sci. Technol. 19, S173 (2004)
• 2. V. Mitin, V. Gružinskis, P. Shiktorov, E. Starikov, J. Appl. Phys. 75, 935 (1994)
• 3. K. Brennan, K. Hess, Solid-State Electron. 27, 347 (1984)
• 4. V.I. Ryzhij, N.A. Bannov, V.A. Fedirko, Fiz. Tekhn. Poluprovod. 18, 769 (1984)
• 5. M.S. Shur, L.F. Eastman, IEEE Trans. Electron. Devices ED-26, 1677 (1979)
• 6. E. Starikov, P. Shiktorov, V. Gružinskis, J.P. Nougier, J.C. Vaissiere, L. Varani, L. Reggiani, J. Appl. Phys. 79, 242 (1996)

Identifiers

DOI

10.12693/APhysPolA.113.943