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2008 | 113 | 3 | 943-946
Article title

Analysis of Conditions for Free-Carrier Grating Formation in InP n⁺nn⁺ Structures using Monte Carlo Technique

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Languages of publication
EN
Abstracts
EN
Electron transport in 5μm long InP n⁺nn⁺ structure with the n-region doping of 10^{15} cm^{-3} is theoretically investigated by the Monte Carlo particle technique at low lattice temperature (T = 10 K), when dominating scattering mechanism is the optical phonon emission. It is shown that at the constant bias a free-carrier grating can be formed inside the n-region. The free-carrier grating formation conditions are analysed by Monte Carlo particle simulation of electric field profiles and noise in the considered InP structure.
Keywords
EN
Year
Volume
113
Issue
3
Pages
943-946
Physical description
Dates
published
2008-03
received
2007-08-26
References
  • 1. V. Gružinskis, P. Shiktorov, E. Starikov, L. Reggiani, L. Varani, J.C. Vaissiere, Semicond. Sci. Technol. 19, S173 (2004)
  • 2. V. Mitin, V. Gružinskis, P. Shiktorov, E. Starikov, J. Appl. Phys. 75, 935 (1994)
  • 3. K. Brennan, K. Hess, Solid-State Electron. 27, 347 (1984)
  • 4. V.I. Ryzhij, N.A. Bannov, V.A. Fedirko, Fiz. Tekhn. Poluprovod. 18, 769 (1984)
  • 5. M.S. Shur, L.F. Eastman, IEEE Trans. Electron. Devices ED-26, 1677 (1979)
  • 6. E. Starikov, P. Shiktorov, V. Gružinskis, J.P. Nougier, J.C. Vaissiere, L. Varani, L. Reggiani, J. Appl. Phys. 79, 242 (1996)
Document Type
Publication order reference
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n334kz
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