Transient Response of Electrons and Phonons in ZnTe Crystals

• Authors: R. Brazis , R. Raguotis
• Languages of publication: EN

Abstracts

EN

The response of electron and phonon ensemble to the switching on and off electric field E in n-type ZnTe crystals is simulated by Monte Carlo method. The results at T=10 K show significant accumulation of LO-phonons and the LO phonon band population inversion with respect to the LA band;the inversion is necessary for the stimulated transfer of LO-LA energy difference to photons. The maximum inversion is at E=7 kV/cm. At T=300 K no phonon band inversion but fast (sub-picosecond) drift velocity switching with ≈100 GHz repetition is feasible.

Keywords

EN

72.10.Di; 72.20.Ht; 72.15.Lh; 78.45.+h

Discipline

• 78.45.+h: Stimulated emission(see also 42.55.-f Lasers)
• 72.20.Ht: High-field and nonlinear effects
• 72.15.Lh: Relaxation times and mean free paths
• 72.10.Di: Scattering by phonons, magnons, and other nonlocalized excitations(see also 71.45.-d Collective effects in electronic structure of bulk materials)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 933-936

Dates

published

2008-03

received

2007-08-26

Contributors

author

R. Brazis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

author

R. Raguotis

• Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania

References

• 1. R. Brazis, R. Raguotis, Acta Phys. Pol. A 107, 339 (2005)
• 2. R. Brazis, R. Raguotis, in 8th ICTON Proc. 2, 203 (2006)
• 3. R. Brazis, D. Nausewicz, R. Raguotis, Phys. Status Solidi B 244, 1662 (2007)
• 4. B.K. Ridley, Quantum Processes in Semiconductors, Clarendon Press, Oxford, 1982

Identifiers

DOI

10.12693/APhysPolA.113.933