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2008 | 113 | 3 | 933-936
Article title

Transient Response of Electrons and Phonons in ZnTe Crystals

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EN
Abstracts
EN
The response of electron and phonon ensemble to the switching on and off electric field E in n-type ZnTe crystals is simulated by Monte Carlo method. The results at T=10 K show significant accumulation of LO-phonons and the LO phonon band population inversion with respect to the LA band;the inversion is necessary for the stimulated transfer of LO-LA energy difference to photons. The maximum inversion is at E=7 kV/cm. At T=300 K no phonon band inversion but fast (sub-picosecond) drift velocity switching with ≈100 GHz repetition is feasible.
Keywords
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, 01108 Vilnius, Lithuania
References
  • 1. R. Brazis, R. Raguotis, Acta Phys. Pol. A 107, 339 (2005)
  • 2. R. Brazis, R. Raguotis, in 8th ICTON Proc. 2, 203 (2006)
  • 3. R. Brazis, D. Nausewicz, R. Raguotis, Phys. Status Solidi B 244, 1662 (2007)
  • 4. B.K. Ridley, Quantum Processes in Semiconductors, Clarendon Press, Oxford, 1982
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n332kz
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