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2008 | 113 | 3 | 929-932
Article title

Monte Carlo Treatment of Non-Equilibrium Processes in n-Type InSb Crystals

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EN
Abstracts
EN
Numerical calculation by Monte Carlo method of the dynamic behaviour of electron ensemble in n-type InSb crystals after step-like application of electric field is presented. The results show essential influence of electron density on the energy relaxation time. The effect of electron energy cooling below equilibrium temperature in compensated n-InSb is obtained numerically for the first time, which is in agreement with experimental results.
Keywords
Contributors
author
  • Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, Goštauto 11, LT-01108 Vilnius, Lithuania
References
  • 1. S. Ašmontas, Electrogradient Phenomena in Semiconductors, Vilnius, Mokslas 1984 (in Russian)
  • 2. A. Matulionis, R. Raguotis, R. Katilius, Phys. Rev. B 56, 2052 (1997)
  • 3. C. Jacoboni, P. Lugli, The Monte Carlo Method for Semiconductor Device Simulation, Springer, New York 1989
  • 4. A. Krotkus, Z. Dobrovolskis, Electron Conduction of Narrow-Gap Semiconductors, Vilnius, Mokslas 1988 (in Russian)
  • 5. M. Akarsu,Ö.Özbaş, Turk. J. Phys. 26, 283 (2002)
  • 6. V. Dienys, Z. Martūnas, G. Tvardauskas, Fiz. Techn. Poluprovodn. 16, 1856 (1982)
  • 7. Z.S. Gribnikov, V.A. Kochelap, Zh. Eksp. Teor. Fiz. 58, 1046 (1970)
  • 8. B.K. Ridley, Quantum Process in Semiconductors, Clarendon Press, Oxford 1982
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n331kz
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