Terahertz Luminescence and Absorption under Impurity Breakdown in Quantum Wells and Strained Semiconductor Layers

• Authors: L. Vorobjev , D. Firsov , V. Shalygin , V. Panevin , A. Sofronov , V. Ustinov , A. Zhukov , A. Egorov , A. Andrianov , A. Zakhar'in , S. Ganichev , S. Danilov , D. Kozlov
• Languages of publication: EN

Abstracts

EN

We present the results of THz luminescence investigations in structures with Si-doped quantum wells and Be-doped GaAsN layers under strong lateral electric field. The peculiar property of these structures is the presence of resonant impurity states which arise due to dimensional quantization in quantum wells and due to built-in strain in GaAsN epilayers. The experimentally obtained THz emission spectra consist of the lines attributed to intra-center electron transitions between resonant and localized impurity states and to the electron transitions involving the subband states. Absorption of THz radiation and its temperature dependence was also studied in structure with tunnel-coupled quantum wells at equilibrium conditions and under electric field.

Keywords

EN

68.65.Fg; 71.55.-i; 71.55.Eq; 73.21.Fg; 73.61.Ey; 78.55.Cr; 78.66.-w; 78.67.De

Discipline

• 78.55.Cr: III-V semiconductors
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)
• 78.67.De: Quantum wells
• 71.55.Eq: III-V semiconductors
• 73.21.Fg: Quantum wells
• 73.61.Ey: III-V semiconductors
• 68.65.Fg: Quantum wells
• 71.55.-i: Impurity and defect levels

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 925-928

Dates

published

2008-03

received

2007-08-26

Contributors

author

L. Vorobjev

• St. Petersburg State Polytechnic University, 29 Polytechnicheskaya st., 195251 St. Petersburg, Russia

author

D. Firsov

• St. Petersburg State Polytechnic University, 29 Polytechnicheskaya st., 195251 St. Petersburg, Russia

author

V. Shalygin

• St. Petersburg State Polytechnic University, 29 Polytechnicheskaya st., 195251 St. Petersburg, Russia

author

V. Panevin

• St. Petersburg State Polytechnic University, 29 Polytechnicheskaya st., 195251 St. Petersburg, Russia

author

A. Sofronov

• St. Petersburg State Polytechnic University, 29 Polytechnicheskaya st., 195251 St. Petersburg, Russia

author

V. Ustinov

• Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

author

A. Zhukov

• Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

author

A. Egorov

• Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

author

A. Andrianov

• Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

author

A. Zakhar'in

• Ioffe Physico-Technical Institute, 194021 St. Petersburg, Russia

author

S. Ganichev

• University of Regensburg, 93040 Regensburg, Germany

author

S. Danilov

• University of Regensburg, 93040 Regensburg, Germany

author

D. Kozlov

• Institute for Physics of Microstructures, 603950 Nizhny Novgorod, Russia

References

• 1. A.V. Andrianov, A.O. Zakhar'in, I.N. Yassievich, N.N. Zinov'ev, JETP Lett. 79, 365 (2004)
• 2. V.Ya. Aleshkin, B.A. Andreev, V.I. Gavrilenko, I.V. Erofeeva, D.V. Kozlov, O.A. Kuznetsov, Nanotechol. 11, 348 (2000)
• 3. M. Helm, F. M. Peeters, F. DeRosa, E. Colas, J.P. Harbison, L.T. Florez. Phys. Rev. B 43, 13983 (1991)

Identifiers

DOI

10.12693/APhysPolA.113.925