Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

• Authors: D. Seliuta , B. Čechavičius , J. Kavaliauskas , G. Krivaitė , I. Grigelionis , S. Balakauskas , G. Valušis , B. Sherliker , M. Halsall , M. Lachab , S. Khanna , P. Harrison , E. Linfield
• Languages of publication: EN

Abstracts

EN

The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.

Keywords

EN

78.66.-w; 85.30.De

Discipline

• 85.30.De: Semiconductor-device characterization, design, and modeling
• 78.66.-w: Optical properties of specific thin films(for optical properties of low-dimensional, mesoscopic, and nanoscale materials, see 78.67.-n; for optical properties of surfaces, see 78.68.+m)

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 909-912

Dates

published

2008-03

received

2007-08-26

Contributors

author

D. Seliuta

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

B. Čechavičius

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

J. Kavaliauskas

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

G. Krivaitė

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

I. Grigelionis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

S. Balakauskas

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

G. Valušis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania

author

B. Sherliker

• School of Electronic and Electrical Engineering, University of Manchester, Manchester, United Kingdom

author

M. Halsall

• School of Electronic and Electrical Engineering, University of Manchester, Manchester, United Kingdom

author

M. Lachab

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

author

S. Khanna

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

author

P. Harrison

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

author

E. Linfield

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom

References

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• 5. D. Seliuta I. Kašalynas, V. Tamošiūnas, S. Balakauskas, Z. Martūnas, S. Ašmontas, G. Valušis, A. Lisauskas, H.G. Roskos, K. Köhler, Electron. Lett. 42, 825 (2006)
• 6. B.Čechavičius. J. Kavaliauskas, G. Krivaitė, D. Seliuta, G. Valušis, M.P. Halsall, M. Steer, P. Harrison, J. Appl. Phys. 98, 023508 (2005)

Identifiers

DOI

10.12693/APhysPolA.113.909