PL EN


Preferences help
enabled [disable] Abstract
Number of results
2008 | 113 | 3 | 909-912
Article title

Terahertz Detection with δ-Doped GaAs/AlAs Multiple Quantum Wells

Content
Title variants
Languages of publication
EN
Abstracts
EN
The authors demonstrate selective detection of terahertz radiation employing berylliumδ-doped GaAs/AlAs multiple quantum wells. The sensitivity up to 1 V/W within 4.2-7.3 THz range at liquid helium temperatures is reached. The Franz-Keldysh oscillations observed in photo- and electroreflectance spectra allowed one to estimate built-in electric fields in the structures studied. It was found that the electric field strength in the cap layer region could vary from 10 kV/cm up to 26 kV/cm, depending on the structure design and temperature.
Keywords
EN
Contributors
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • Semiconductor Physics Institute, A. Goštauto 11, LT-01108 Vilnius, Lithuania
author
  • School of Electronic and Electrical Engineering, University of Manchester, Manchester, United Kingdom
author
  • School of Electronic and Electrical Engineering, University of Manchester, Manchester, United Kingdom
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, United Kingdom
References
  • 1. R. Köhler, A. Tredicucci, F. Beltram, H.E. Beere, E.H. Linfeld, A.G. Davies, D.A. Ritchie, R. Iotti, F. Rossi, Nature 417, 156 (2002)
  • 2. M. Graf, G. Scalari, D. Hofstetter, J. Faist, H. Beere, E. Linfield, D. Ritchie, G. Davies, Appl. Phys. Lett. 84, 475 (2004)
  • 3. M.B.M. Rinzan, A.G.U. Perera, S. G. Matsik, H.C. Liu, Z.R. Wasilewski, M. Buchatan, Appl. Phys. Lett. 86, 071112 (2005)
  • 4. W. Knap, Y. Deng, S. Rumyantsev, J.Q. Lű, M.S. Shur, C.A. Saylor, L.C. Brunel, Appl. Phys. Lett. 80, 3433 (2002)
  • 5. D. Seliuta I. Kašalynas, V. Tamošiūnas, S. Balakauskas, Z. Martūnas, S. Ašmontas, G. Valušis, A. Lisauskas, H.G. Roskos, K. Köhler, Electron. Lett. 42, 825 (2006)
  • 6. B.Čechavičius. J. Kavaliauskas, G. Krivaitė, D. Seliuta, G. Valušis, M.P. Halsall, M. Steer, P. Harrison, J. Appl. Phys. 98, 023508 (2005)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n326kz
JavaScript is turned off in your web browser. Turn it on to take full advantage of this site, then refresh the page.