Efficiency of GaAs-Based Pulsed Terahertz Emitters

• Authors: A. Reklaitis
• Languages of publication: EN

Abstracts

EN

Terahertz emission from the electron-hole plasma excited by a femtosecond optical pulse in GaAs-based emitters is studied by the Monte Carlo simulations. The THz energy radiated from the n- and p-doped GaAs surface THz emitters, from the contactless p-i-n emitter, and from the photoconductive emitter is evaluated. The obtained results show that the THz energy radiated by the photoconductive emitter exceeds the energy radiated by the surface and p-i-n THz emitters by more than one order of magnitude.

Keywords

EN

42.72.Ai; 73.20.Mf; 78.20.Bh; 78.47.-p

Discipline

• 42.72.Ai: Infrared sources(see also 07.57.Hm Infrared, submillimeter wave, microwave, and radiowave sources)
• 73.20.Mf: Collective excitations (including excitons, polarons, plasmons and other charge-density excitations)(for collective excitations in quantum Hall effects, see 73.43.Lp)
• 78.47.-p: Spectroscopy of solid state dynamics
• 78.20.Bh: Theory, models, and numerical simulation

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 903-908

Dates

published

2008-03

received

2007-08-26

Contributors

author

A. Reklaitis

• Semiconductor Physics Institute, A. Goštauto 11, LT-01108, Vilnius, Lithuania

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Identifiers

DOI

10.12693/APhysPolA.113.903