Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers

• Authors: J. Mc Tavish , Z. Ikonić , D. Indjin , P. Harrison
• Languages of publication: EN

Abstracts

EN

We report on the results of our simulations of Γ-X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ-X scattering), a double quantum well (to compare the Γ-X-G and Γ-Γ scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.

Keywords

EN

72.10.-d; 73.21.Fg; 73.63.Hs

Discipline

• 73.21.Fg: Quantum wells
• 73.63.Hs: Quantum wells
• 72.10.-d: Theory of electronic transport; scattering mechanisms

• Publisher: Institute of Physics, Polish Academy of Sciences
• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 891-902

Dates

published

2008-03

received

2007-08-26

Contributors

author

J. Mc Tavish

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K

author

Z. Ikonić

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K

author

D. Indjin

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K

author

P. Harrison

• School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K

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Identifiers

DOI

10.12693/APhysPolA.113.891