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2008 | 113 | 3 | 891-902
Article title

Intervalley Scattering and the Role of Indirect Band Gap AlAs Barriers: Application to GaAs/AlGaAs Quantum Cascade Lasers

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EN
Abstracts
EN
We report on the results of our simulations of Γ-X scattering in GaAs/AlGaAs heterostructures, discussing the importance of the mole fraction, doping density, and lattice and electron temperature in determining the scattering rates. We consider three systems, a single quantum well (for the investigation of Γ-X scattering), a double quantum well (to compare the Γ-X-G and Γ-Γ scattering rates), and an example of a GaAs/AlGaAs mid-infrared quantum cascade laser. Our simulations suggest that Γ-X scattering can be significant at room temperature but falls off rapidly at lower temperatures. One important factor determining the scattering rate is found to be the energy difference between the Γ- and X-states.
Keywords
EN
Publisher

Year
Volume
113
Issue
3
Pages
891-902
Physical description
Dates
published
2008-03
received
2007-08-26
Contributors
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K
author
  • School of Electronic and Electrical Engineering, University of Leeds, Leeds LS2 9JT, U.K
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YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n324kz
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