Terahertz Generation from Femtosecond-Laser-Excited GaAs Surface Due to Electric-Field-Induced, Optical Rectification

• Authors: V. Malevich , P. Ziaziulia , I. Manak
• Languages of publication: EN

Abstracts

EN

The dynamics of the depletion field screening induced by photoexcited carriers and THz generation caused by the electric-field-induced optical rectification are simulated for GaAs surface excited by femtosecond laser radiation on the basis of an ensemble Monte Carlo method. The results show that the photocarrier-induced screening occurs on a subpicosecond time scale and THz pulse essentially changes its wave form depending on excitation pulse duration and fluence. The possibility to use the depletion electric field induced THz generation for study of subpicosecond electric field screening dynamics is discussed.

Keywords

EN

42.65.Re; 42.65.Ky; 73.30.+y

Discipline

• 42.65.Re: Ultrafast processes; optical pulse generation and pulse compression(for ultrafast spectroscopy, see 78.47.J-; for ultrafast magnetization dynamics, see 75.78.Jp)
• 42.65.Ky: Frequency conversion; harmonic generation, including higher-order harmonic generation(see also 42.79.Nv Optical frequency converters)
• 73.30.+y: Surface double layers, Schottky barriers, and work functions(see also 82.45.Mp Thin layers, films, monolayers, membranes in electrochemistry; see also 87.16.D- Membranes, bilayers, and vesicles in biological physics)

• Journal: Acta Physica Polonica A
• Year: 2008
• Volume: 113
• Issue: 3
• Pages: 887-890

Dates

published

2008-03

received

2007-08-26

Contributors

author

V. Malevich

• B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Av. 68, 220072, Minsk, Belarus

author

P. Ziaziulia

• Belarussian State University, Nezalezhnasti Av. 4, 220050, Minsk, Belarus

author

I. Manak

• Belarussian State University, Nezalezhnasti Av. 4, 220050, Minsk, Belarus

References

• 1. R. Adomavicius, A. Urbanowicz, G. Molis, A. Krotkus, E. Satkovskis, Appl. Phys. Lett. 85, 2463 (2004)
• 2. M. Reid, I.V. Cravetchi, R. Fedosejevs, Phys. Rev. B 72, 035201 (2005)
• 3. R.W. Hockney, J.W. Eastwood, Computer Simulation Using Particles, McGraw-Hill, New York 1981
• 4. V.L. Malevich, Semicond. Sci. Technol. 17, 551 (2002)
• 5. D. Lim, M.C. Downer, J.G. Ekerdt, Appl. Phys. Lett. 77, 181 (2000)
• 6. A. Krotkus, R. Adomavicius, G. Molis, V.L. Malevich, J. Nanoelectron. Optoelectron. 2, 108 (2007)

Identifiers

DOI

10.12693/APhysPolA.113.887