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Number of results
2008 | 113 | 3 | 887-890
Article title

Terahertz Generation from Femtosecond-Laser-Excited GaAs Surface Due to Electric-Field-Induced, Optical Rectification

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EN
Abstracts
EN
The dynamics of the depletion field screening induced by photoexcited carriers and THz generation caused by the electric-field-induced optical rectification are simulated for GaAs surface excited by femtosecond laser radiation on the basis of an ensemble Monte Carlo method. The results show that the photocarrier-induced screening occurs on a subpicosecond time scale and THz pulse essentially changes its wave form depending on excitation pulse duration and fluence. The possibility to use the depletion electric field induced THz generation for study of subpicosecond electric field screening dynamics is discussed.
Keywords
EN
Contributors
author
  • B.I. Stepanov Institute of Physics, National Academy of Sciences of Belarus, Nezalezhnasti Av. 68, 220072, Minsk, Belarus
author
  • Belarussian State University, Nezalezhnasti Av. 4, 220050, Minsk, Belarus
author
  • Belarussian State University, Nezalezhnasti Av. 4, 220050, Minsk, Belarus
References
  • 1. R. Adomavicius, A. Urbanowicz, G. Molis, A. Krotkus, E. Satkovskis, Appl. Phys. Lett. 85, 2463 (2004)
  • 2. M. Reid, I.V. Cravetchi, R. Fedosejevs, Phys. Rev. B 72, 035201 (2005)
  • 3. R.W. Hockney, J.W. Eastwood, Computer Simulation Using Particles, McGraw-Hill, New York 1981
  • 4. V.L. Malevich, Semicond. Sci. Technol. 17, 551 (2002)
  • 5. D. Lim, M.C. Downer, J.G. Ekerdt, Appl. Phys. Lett. 77, 181 (2000)
  • 6. A. Krotkus, R. Adomavicius, G. Molis, V.L. Malevich, J. Nanoelectron. Optoelectron. 2, 108 (2007)
Document Type
Publication order reference
Identifiers
YADDA identifier
bwmeta1.element.bwnjournal-article-appv113n323kz
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